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参数资料
| 型号： | HMC261LM1 |
| 厂商： | HITTITE MICROWAVE CORP |
| 元件分类： | 放大器 |
| 英文描述： | 20000 MHz - 32000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER |
| 封装： | PLASTIC, SMT, 8 PIN |
| 文件页数： | 3/8页 |
| 文件大小： | 466K |
| 代理商： | HMC261LM1 |
MICROWAVE CORPORATION
1 - 10
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Visit us at www.hittite.com, or Email at sales@hittite.com
AMPLIFIERS
-
SMT
1
HMC261LM1
0
5
10
15
20
22
24
26
28
30
32
+25 C
+85 C
-40 C
Output
P1dB
(dBm)
FREQUENCY (GHz)
0
5
10
15
20
22
24
26
28
30
32
+25 C
+85 C
-40 C
Output
P1dB
(dBm)
FREQUENCY (GHz)
0
5
10
15
20
22
24
26
28
30
32
+25 C
+85 C
-40 C
Psat
(dBm)
FREQUENCY (GHz)
0
5
10
15
20
22
24
26
28
30
32
+25 C
+85 C
-40 C
Psat
(dBm)
FREQUENCY (GHz)
Psat vs. Temperature @ Vdd = +3V
P1dB Output Power vs.
Temperature @ Vdd = +4V
Psat vs. Temperature @ Vdd = +4V
SMT DISTRIBUTED GaAs
MMIC AMPLIFIER, 20 - 32 GHz
P1dB Output Power vs.
Temperature @ Vdd = +3V
IP3 vs. Temperature @ Vdd = +3V
IP3 vs. Temperature @ Vdd = +4V
10
15
20
25
30
20
22
24
26
28
30
32
+25 C
+85 C
-40 C
Third
Order
Intercept
Point
(dBm)
FREQUENCY (GHz)
10
15
20
25
30
20
22
24
26
28
30
32
+25 C
+85 C
-40 C
Third
Order
Intercept
Point
(dBm)
FREQUENCY (GHz)
v03.1201
DISCONTINUED
PRODUCT
Not
Recommended
for New
Designs
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相关代理商/技术参数 |
参数描述 |
|---|---|
| HMC261LM1_01 | 制造商:HITTITE 制造商全称:Hittite Microwave Corporation 功能描述:SMT DISTRIBUTED GaAs MMIC AMPLIFIER, 20 - 32 GHz |
| HMC262 | 制造商:HITTITE 制造商全称:Hittite Microwave Corporation 功能描述:GaAs MMIC LOW NOISE AMPLIFIER 15 - 24 GHz |
| HMC262_00 | 制造商:HITTITE 制造商全称:Hittite Microwave Corporation 功能描述:GaAs MMIC LOW NOISE AMPLIFIER, 15 - 24 GHz |
| HMC262_02 | 制造商:HITTITE 制造商全称:Hittite Microwave Corporation 功能描述:GaAs MMIC LOW NOISE AMPLIFIER, 15 - 24 GHz |
| HMC263 | 制造商:HITTITE 制造商全称:Hittite Microwave Corporation 功能描述:GaAs MMIC LOW NOISE AMPLIFIER, 24 - 36 GHz |
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