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参数资料
| 型号： | HMC262 |
| 厂商： | HITTITE MICROWAVE CORP |
| 元件分类： | 放大器 |
| 英文描述： | 15000 MHz - 24000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER |
| 封装： | 2.08 X 1.32 MM, DIE-8 |
| 文件页数： | 5/6页 |
| 文件大小： | 274K |
| 代理商： | HMC262 |
MICROWAVE CORPORATION
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For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Visit us at www.hittite.com, or Email at sales@hittite.com
AMPLIFIERS
-
CHIP
1
GaAs MMIC LOW NOISE
AMPLIFIER, 15 - 24 GHz
HMC262
v01.0500
MMIC Assembly Techniques for HMC262
Mounting & Bonding Techniques for Millimeterwave GaAs MMICs
The die should be attached directly to the ground plane eutectically or with conductive epoxy (see HMC general
Handling, Mounting, Bonding Note.)
50 Ohm Microstrip transmission lines on 0.127 mm (5 mil) thick alumina thin lm substrates are recommended for
bringing RF to and from the chip (Figure 1). If 0.254 mm (10 mil) thick alumina thin lm substrates must be used,
the die should be raised 0.150 mm (6 mils) so that the surface of the die is coplanar with the surface of the sub-
strate. One way to accomplish this is to attach the 0.102 mm (4 mil) thick die to a 0.150 mm (6 mil) thick molybde-
num heat spreader (moly-tab) which is then attached to the ground plane (Figure 2).
Microstrip substrates should be brought as close to the die as possible in order to minimize bod wire length. Typi-
cal die-to-substrate spacing is 0.076 mm (3 mils).
An RF bypass capacitor should be used on the Vdd input. A 100 pF single layer capacitor (mounted eutectically
or by conductive epoxy) placed no further than 0.762 mm (30 mils) from the chip is recommended.
DISCONTINUED
PRODUCT
Not
Recommended
for New
Designs
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相关代理商/技术参数 |
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|---|---|
| HMC262_00 | 制造商:HITTITE 制造商全称:Hittite Microwave Corporation 功能描述:GaAs MMIC LOW NOISE AMPLIFIER, 15 - 24 GHz |
| HMC262_02 | 制造商:HITTITE 制造商全称:Hittite Microwave Corporation 功能描述:GaAs MMIC LOW NOISE AMPLIFIER, 15 - 24 GHz |
| HMC263 | 制造商:HITTITE 制造商全称:Hittite Microwave Corporation 功能描述:GaAs MMIC LOW NOISE AMPLIFIER, 24 - 36 GHz |
| HMC263_07 | 制造商:HITTITE 制造商全称:Hittite Microwave Corporation 功能描述:GaAs MMIC LOW NOISE AMPLIFIER, 24 - 36 GHz |
| HMC263LP4_09 | 制造商:HITTITE 制造商全称:Hittite Microwave Corporation 功能描述:GaAs MMIC LOW NOISE AMPLIFIER, 24 - 36 GHz |
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