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参数资料
| 型号： | HMC308E |
| 厂商： | HITTITE MICROWAVE CORP |
| 元件分类： | 放大器 |
| 英文描述： | 800 MHz - 3800 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER |
| 封装： | 3 X 3 MM, ROHS COMPLIANT, ULTRA SMALL, PLASTIC, SOT-26, 6 PIN |
| 文件页数： | 1/6页 |
| 文件大小： | 246K |
| 代理商： | HMC308E |
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
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HMC308 / 308E
GENERAL PURPOSE 100 mW GaAs
MMIC AMPLIFIER, 0.8 - 3.8 GHz
v05.1107
General Description
Features
Functional Diagram
The HMC308 & HMC308E are low cost MESFET
MMIC amplifiers that operate from a single +3 to
+5V supply from 0.8 to 3.8 GHz. The surface mount
SOT26 amplifier can be used as a broadband ampli-
fier stage or used with external matching for opti-
mized narrow band applications. With Vdd biased at
+5V, the HMC308 & HMC308E offers 18 dB of gain
and +20 dBm of saturated output power while requir-
ing only 53 mA of current. This amplifier is ideal as
a driver amplifier for transmitters or for use as a
local oscillator (LO) amplifier to increase drive levels
for passive mixers. The amplifier occupies 0.014 in2
(9 mm2), making it ideal for compact radio designs.
Gain: 18 dB
P1dB Output Power: +17 dBm@ +5V
Single Supply: +3V or +5V
No External Components
Integrated DC Blocks
Ultra Small Package: SOT26
Electrical Specifications, T
A = +25° C, as a function of Vdd
Typical Applications
Broadband or Narrow Band Applications:
Cellular/PCS/3G
Fixed Wireless & Telematics
Cable Modem Termination Systems
WLAN, Bluetooth & RFID
Parameter
Vdd = +3V
Vdd = +5V
Units
Min.
Typ.
Max.
Min.
Typ.
Max.
Min.
Typ.
Max.
Min.
Typ.
Max.
Frequency Range
2.3 - 2.7
0.8 - 2.3
2.3 - 2.7
2.7 - 3.8
GHz
Gain
13
15.5
14
18
13
16
10
13
dB
Gain Variation over Temperature
0.025
0.035
0.025
0.035
0.025
0.035
0.025
0.035
dB/°C
Input Return Loss
11
8
11
13
dB
Output Return Loss
17
13
12
13
dB
Output Power for 1 dB
Compression (P1dB)
12
14
17
13.5
16.5
12
15
dBm
Saturated Output Power (Psat)
17
20
19.5
17
dBm
Output Third Order Intercept (IP3)
23
26
27
30
26
29
24
27
dBm
Noise Figure
7
7.5
7
dB
Supply Current (Idd)
50
53
mA
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相关代理商/技术参数 |
参数描述 |
|---|---|
| HMC308ETR | 制造商:Hittite Microwave Corp 功能描述:IC MMIC AMP GP SOT26 制造商:Hittite Microwave Corp 功能描述:HMC308 Series 0.8 - 3.8 GHz General Purpose GaAs MMIC Amplifier - SOT-26-6 |
| HMC309MS8 | 制造商:HITTITE 制造商全称:Hittite Microwave Corporation 功能描述:GaAs MMIC 2.4 GHz FRONT-END LNA / SWITCH |
| HMC309MS8_04 | 制造商:HITTITE 制造商全称:Hittite Microwave Corporation 功能描述:GaAs MMIC 2.4 GHz FRONT-END LNA / SWITCH |
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