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参数资料
| 型号： | HMC313ETR |
| 厂商： | HITTITE MICROWAVE CORP |
| 元件分类： | 放大器 |
| 英文描述： | 0 MHz - 6000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER |
| 封装： | ROHS COMPLIANT, ULTRA SMALL, PLASTIC, SMT, SOT-26, 6 PIN |
| 文件页数： | 4/6页 |
| 文件大小： | 210K |
| 代理商： | HMC313ETR |
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
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Absolute Maximum Ratings
Collector Bias Voltage (Vcc)
+5.5 Vdc
RF Input Power (RFIN)(Vcc = +5Vdc)
+20 dBm
Junction Temperature
150 °C
Continuous Pdiss (T = 85 °C)
(derate 3.99 mW/°C above 85 °C)
0.259 W
Thermal Resistance
(junction to lead)
251 °C/W
Storage Temperature
-65 to +150 °C
Operating Temperature
-40 to +85 °C
ESD Sensitivity (HBM)
Class 1A
Outline Drawing
Part Number
Package Body Material
Lead Finish
MSL Rating
Package Marking
[3]
HMC313
Low Stress Injection Molded Plastic
Sn/Pb Solder
MSL1
[1]
H313
XXXX
HMC313E
RoHS-compliant Low Stress Injection Molded Plastic
100% matte Sn
MSL1
[2]
313E
XXXX
[1] Max peak reflow temperature of 235 °C
[2] Max peak reflow temperature of 260 °C
[3] 4-Digit lot number XXXX
Package Information
NOTES:
1. LEADFRAME MATERIAL: COPPER ALLOY
2. DIMENSIONS ARE IN INCHES [MILLIMETERS]
3. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.15mm PER SIDE.
4. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.25mm PER SIDE.
5. ALL GROUND LEADS MUST BE SOLDERED TO PCB RF GROUND
HMC313 / 313E
GaAs InGaP HBT MMIC BROADBAND
AMPLIFIER GAIN BLOCK, DC - 6 GHz
v06.0109
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
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| HMC315 | 制造商:HITTITE 制造商全称:Hittite Microwave Corporation 功能描述:GaAs InGaP HBT MMIC DARLINGTON AMPLIFIER, DC - 7.0 GHz |
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