参数资料
型号: HMC318MS8G
厂商: HITTITE MICROWAVE CORP
元件分类: 放大器
英文描述: 5000 MHz - 6000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER
封装: ULTRA SMALL, PLASTIC, SMT, MSOP-8
文件页数: 3/6页
文件大小: 209K
代理商: HMC318MS8G
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
L
O
W
NO
IS
E
A
M
P
L
IF
IE
R
S
-
SM
T
8
8 - 16
Input Return Loss over Control Range
Gain vs. Control Voltage @ 5.8 GHz
Output Return Loss over Control Range
Reverse Isolation vs.
Temperature, Vctl = 0V
Noise Figure and
OIP3 vs. Control Voltage
Frequency = 5.8 GHz
VCTL
Noise Figure (dB)
OIP3 (dBm)*
0V
2.5
13.0
1.4V
4.5
1.2
3.0V
10.5
-6.7
*Two-tone input power = -20 dBm per tone.
Absolute Maximum Ratings
Drain Bias Voltage (Vdd)
+7.0 Vdc
Control Voltage Range (Vctl)
-0.2 to Vdd
RF Input Power (RFIN)(Vdd = +3.0 Vdc)
0 dBm
Channel Temperature
150 °C
Continuous Pdiss (T = 85 °C)
(derate 9.76 mW/°C above 85 °C)
0.634 W
Thermal Resistance
(channel to ground paddle)
102 °C/W
Storage Temperature
-65 to +150 °C
Operating Temperature
-40 to +85 °C
ESD Sensitivity (HBM)
Class 1A
-12
-8
-4
0
4
8
12
0.0
0.5
1.0
1.5
2.0
2.5
3.0
Gain
(dB)
Control Voltage (Vdc)
-50
-40
-30
-20
-10
0
4.5
5
5.5
6
6.5
+25C
+85C
-40C
REVERSE
ISOLATION
(dB)
FREQUENCY (GHz)
-20
-15
-10
-5
0
4.5
5
5.5
6
6.5
Vctl= 3.0V
Vctl= 1.8V
Vctl= 1.4V
Vctl= 0.8V
Vctl= 0V
Return
Loss
(dB)
FREQUENCY (GHz)
-20
-15
-10
-5
0
4.5
5
5.5
6
6.5
Vctl= 3.0V
Vctl= 1.8V
Vctl= 1.4V
Vctl= 0.8V
Vctl= 0V
Return
Loss
(dB)
FREQUENCY (GHz)
HMC318MS8G / 318MS8GE
GaAs MMIC LOW NOISE AMPLIFIER
with AGC, 5 - 6 GHz
v02.0607
Gain Control
Vctl (Vdc)
Gain State
Typical
Ictl (uA)
0Maximum
25
Vdd
Minimum
25
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
相关PDF资料
PDF描述
HMC318MS8GE 5000 MHz - 6000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER
HMC320MS8G 5000 MHz - 6000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER
HMC320MS8GE 5000 MHz - 6000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER
HMC321LP4E 0 MHz - 8000 MHz RF/MICROWAVE SGL POLE EIGHT THROW SWITCH, 3.1 dB INSERTION LOSS
HMC322 0 MHz - 10000 MHz RF/MICROWAVE SGL POLE EIGHT THROW SWITCH, 3.4 dB INSERTION LOSS
相关代理商/技术参数
参数描述
HMC318MS8G_07 制造商:HITTITE 制造商全称:Hittite Microwave Corporation 功能描述:GaAs MMIC LOW NOISE AMPLIFIER with AGC, 5.0 - 6.0 GHz
HMC318MS8G_09 制造商:HITTITE 制造商全称:Hittite Microwave Corporation 功能描述:GaAs MMIC LOW NOISE AMPLIFIER with AGC, 5 - 6 GHz
HMC318MS8GE 制造商:Hittite Microwave Corp 功能描述:IC AMP VGA LNA 5.0-6.0GHZ 8-MSOP
HMC31DRAH 功能描述:CONN EDGECARD 62POS R/A .100 SLD RoHS:是 类别:连接器,互连式 >> Card Edge 系列:- 标准包装:1 系列:- 卡类型:非指定 - 双边 类型:母头 Number of Positions/Bay/Row:36 位置数:72 卡厚度:0.093"(2.36mm) 行数:2 间距:0.156"(3.96mm) 特点:- 安装类型:通孔,直角 端子:焊接 触点材料:磷青铜 触点表面涂层:金 触点涂层厚度:10µin(0.25µm) 触点类型::环形波纹管 颜色:绿 包装:托盘 法兰特点:- 材料 - 绝缘体:聚苯硫醚(PPS) 工作温度:-65°C ~ 125°C 读数:双
HMC31DRAH-S734 功能描述:CONN EDGECARD 62POS .100 R/A PCB RoHS:是 类别:连接器,互连式 >> Card Edge 系列:- 标准包装:1 系列:- 卡类型:非指定 - 双边 类型:母头 Number of Positions/Bay/Row:60 位置数:120 卡厚度:0.062"(1.57mm) 行数:2 间距:0.100"(2.54mm) 特点:- 安装类型:通孔,直角 端子:焊接 触点材料:磷青铜 触点表面涂层:金 触点涂层厚度:10µin(0.25µm) 触点类型::全波纹管 颜色:蓝 包装:管件 法兰特点:侧面安装开口,无螺纹,0.125"(3.18mm)直径 材料 - 绝缘体:聚对苯二甲酸丁二酯(PBT) 工作温度:-65°C ~ 125°C 读数:双