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参数资料
| 型号： | HMC349MS8GE |
| 厂商： | Hittite Microwave Corporation |
| 文件页数： | 1/6页 |
| 文件大小： | 0K |
| 描述： | IC GAAS MESFET SW SPDT 8MSOP |
| 标准包装： | 1 |
| RF 型： | 通用 |
| 频率： | 0Hz ~ 4GHz |
| 特点： | SPDT |
| 封装/外壳： | 8-TSSOP，8-MSOP（0.118"，3.00mm 宽）裸露焊盘 |
| 供应商设备封装： | 8-MSOP-EP |
| 包装： | 标准包装 |
| 其它名称： | 1127-1026-6 |
HMC349MS8G / 349MS8GE
10
v02.0607
Typical Applications
The HMC349MS8G / HMC349MS8GE is ideal for:
? Basestation Infrastructure
? MMDS & 3.5 GHz WLL
? CATV/CMTS
? Test Instrumentation
Functional Diagram
HIGH ISOLATION SPDT
NON-REFLECTIVE SWITCH, DC - 4 GHz
Features
High Isolation: 70 dB @ 1 GHz
57 dB @ 2 GHz
Single Positive Control: 0/+5V
+52 dBm Input IP3
Non-Reflective Design
All Off State
Ultra Small MS8G SMT Package: 14.8 mm 2
Included in the HMC-DK005 Designer’s Kit
General Description
The HMC349MS8G & HMC349MS8GE are high
isolation non-reflective DC to 4 GHz GaAs MESFET
SPDT switches in low cost 8 lead MSOP8G surface
mount packages with exposed ground paddles.
The switch is ideal for cellular/PCS/3G basestation
applications yielding 50 to 60 dB isolation, low
0.8 dB insertion loss and +52 dBm input IP3. Power
handling is excellent up through the 3.5 GHz WLL
band with the switch offering a P1dB compression
point of +31 dBm. On-chip circuitry allows a single
positive voltage control of 0/+5 Volts at very low DC
currents. An enable input (EN) set to logic high will
put the switch in an “all off ” state.
Electrical Specifi cations, T A = +25° C, Vctl = 0/+5 Vdc, Vdd = +5 Vdc, 50 Ohm System
Insertion Loss
Isolation (RFC to RF1/RF2)
Parameter
Frequency
DC - 1.0 GHz
DC - 2.0 GHz
DC - 3.0 GHz
DC - 4.0 GHz
DC - 1.0 GHz
DC - 2.0 GHz
DC - 3.0 GHz
DC - 4.0 GHz
Min.
60
54
45
42
Typ.
0.8
0.9
1.2
1.8
70
57
50
47
Max.
1.1
1.2
1.5
2.1
Units
dB
dB
dB
dB
dB
dB
dB
dB
DC - 1.0 GHz
23
dB
Return Loss (On State)
Return Loss (Off State)
DC - 2.0 GHz
DC - 3.0 GHz
DC - 4.0 GHz
0.5 - 2.0 GHz
0.5 - 3.0 GHz
0.5 - 4.0 GHz
18
13
8
20
17
14
dB
dB
dB
dB
dB
dB
Input Power for 1 dB Compression
Input Third Order Intercept
(Two-Tone Input Power = +7 dBm Each Tone)
0.25 - 4.0 GHz
0.25 - 1.0 GHz
1.0 - 2.0 GHz
2.0 - 3.0 GHz
3.0 - 4.0 GHz
27
31
53
50
49
47
dBm
dBm
dBm
dBm
dBm
Switching Speed
DC - 4.0 GHz
tRISE, tFALL (10/90% RF)
tON, tOFF (50% CTL to 10/90% RF)
40
120
ns
ns
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
10 - 244
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
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相关代理商/技术参数 |
参数描述 |
|---|---|
| HMC349MS8GETR | 制造商:Hittite Microwave Corp 功能描述:IC GAAS MESFET SW SPDT 8MSOP 制造商:Hittite Microwave Corp 功能描述:HMC349 Series DC - 4.0 GHz GaAs MMIC SPDT Non Reflective CATV Switch - MSOP-8EP |
| HMC350MS8 | 制造商:HITTITE 制造商全称:Hittite Microwave Corporation 功能描述:GaAs MMIC HIGH IP3 SINGLEBALANCED MIXER, 0.6 - 1.2 GHz |
| HMC350MS8_06 | 制造商:HITTITE 制造商全称:Hittite Microwave Corporation 功能描述:GaAs MMIC HIGH IP3 SINGLEBALANCED MIXER, 0.6 - 1.2 GHz |
| HMC350MS8_10 | 制造商:HITTITE 制造商全称:Hittite Microwave Corporation 功能描述:GaAs MMIC HIGH IP3 SINGLE BALANCED MIXER, 0.6 - 1.2 GHz |
| HMC351S8 | 制造商:HITMIC 功能描述: |
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