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参数资料
| 型号： | HMC349MS8GE |
| 厂商： | HITTITE MICROWAVE CORP |
| 元件分类： | 开关 |
| 英文描述： | 0 MHz - 4000 MHz RF/MICROWAVE SGL POLE DOUBLE THROW SWITCH, 2.1 dB INSERTION LOSS |
| 封装： | ROHS COMPLIANT, ULTRA SMALL, PLASTIC, SMT, MSOP-8 |
| 文件页数： | 3/6页 |
| 文件大小： | 214K |
| 代理商： | HMC349MS8GE |
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For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
Truth Table
Absolute Maximum Ratings
Control Input
Signal Path State
Vctl
EN
RFC - RF1
RFC - RF2
Low
OFF
ON
High
Low
ON
OFF
Low
High
OFF
High
OFF
RF Input Power (Vctl = 0V/+5V)
(0.25 - 4 GHz)
+30 dBm (T = +85 °C)
Supply Voltage Range (Vdd)
+7 Vdc
Control Voltage Range (Vctl)
-1V to Vdd +1V
Hot Switch Power Level
(Vdd = +5V)
+30 dBm
Channel Temperature
150 °C
Continuous Pdiss (T = 85 °C)
(derate 12 mW/°C above 85 °C)
0.75 W
Thermal Resistance
87 °C/W
Storage Temperature
-65 to +150 °C
Operating Temperature
-40 to +85 °C
ESD Sensitivity (HBM)
Class 1A
Note: DC blocking capacitors are required at ports RFC,
RF1 and RF2. Their value will determine the lowest trans-
mission frequency.
State
Bias Condition
Low
0 to +0.8 Vdc @ <1 μA Typical
High
+2.0 to +5.0 Vdc @ 30 μA Typical
Vdd Range = +5.0 Vdc ± 10%
Vdd
(Vdc)
Idd (Typ.)
(mA)
Idd (Max.)
(mA)
+5.0
2.3
5.0
Bias Voltage & Current
TTL/CMOS Control Voltages
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
HMC349MS8G / 349MS8GE
HIGH ISOLATION SPDT
NON-REFLECTIVE SWITCH, DC - 4 GHz
v02.0607
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