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参数资料
| 型号： | HMC356LP3E |
| 厂商： | HITTITE MICROWAVE CORP |
| 元件分类： | 放大器 |
| 英文描述： | 350 MHz - 550 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER |
| 封装： | 3 X 3 MM, ROHS COMPLIANT, LEADLESS, PLASTIC, SMT, QFN-16 |
| 文件页数： | 5/6页 |
| 文件大小： | 272K |
| 代理商： | HMC356LP3E |
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
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7
7 - 50
Pin Number
Function
Description
Interface Schematic
1, 5, 8, 9, 10,
12, 13, 14
N/C
No connection necessary.
These pins may be connected to RF/DC ground.
2, 4, 6,16
GND
These pins and package ground paddle
must be connected to RF/DC ground.
3RFIN
This pin is matched to 50 Ohms with a 51 nH
inductor to ground. See Application Circuit.
7ACG
AC Ground - An external capacitor of 0.01μF to
ground is required for low frequency bypassing.
See Application Circuit for further details.
11
RFOUT
This pin is AC coupled and matched to 50 Ohms.
15
Vdd
Power supply voltage. Choke inductor and bypass
capacitor are required. See application circuit.
Pin Descriptions
Application & Evaluation PCB Circuit
Note 1: Choose value of capacitor C1 for low frequency
bypassing. A 0.01 μF ±10% capacitor is recommended.
Note 2: L1, L2 and C1 should be located as close to pins as
possible.
HMC356LP3 / 356LP3E
GaAs PHEMT MMIC LOW NOISE
AMPLIFIER, 350 - 550 MHz
v03.0610
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相关代理商/技术参数 |
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| HMC3587LP3BE | 功能描述:RF Amplifier IC General Purpose 4GHz ~ 10GHz 12-SMT (3x3) 制造商:analog devices inc. 系列:- 包装:剪带 零件状态:有效 频率:4GHz ~ 10GHz P1dB:11dBm 增益:14.5dB 噪声系数:4.5dB RF 类型:通用 电压 - 电源:5V 电流 - 电源:47mA 测试频率:4GHz ~ 5GHz 封装/外壳:12-VFQFN 裸露焊盘 供应商器件封装:12-SMT（3x3） 标准包装:1 |
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