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参数资料
| 型号： | HMC373LP3 |
| 厂商： | HITTITE MICROWAVE CORP |
| 元件分类： | 放大器 |
| 英文描述： | 700 MHz - 1000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER |
| 封装： | 3 X 3 MM, LEADLESS, PLASTIC, SMT, QFN-16 |
| 文件页数： | 1/8页 |
| 文件大小： | 274K |
| 代理商： | HMC373LP3 |
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
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HMC373LP3 / 373LP3E
GaAs PHEMT MMIC LOW NOISE
AMPLIFIER w/ BYPASS MODE, 700 - 1000 MHz
v03.0610
General Description
Features
Functional Diagram
The HMC373LP3 / HMC373LP3E are versatile, high
dynamic range GaAs MMIC Low Noise Amplifiers
that integrates a low loss LNA bypass mode on the
IC. The amplifier is ideal for GSM & CDMA cellular
basestation front-end receivers operating between
700 and 1000 MHz and provides 0.9 dB noise figure,
14 dB of gain and +35 dBm IP3 from a single supply of
+5V @ 90 mA. Input and output return losses are 28
and 12 dB respectively with the LNA requiring minimal
external components to optimize the RF input match,
RF ground and DC bias. By presenting an open or
short circuit to a single control line, the LNA can be
switched into a low 2.0 dB loss bypass mode reducing
the current consumption to 10 μA. For applications
which require improved noise figure, please see the
HMC668LP3(E).
Noise Figure: 0.9 dB
Output IP3: +35 dBm
Gain: 14 dB
Low Loss LNA Bypass Path
Single Supply: +5V @ 90 mA
50 Ohm Matched Output
Electrical Specifications, T
A = +25° C, Vdd = +5V
Typical Applications
The HMC373LP3 / HMC373LP3E is ideal for
basestation receivers:
GSM, GPRS & EDGE
CDMA & W-CDMA
Private Land Mobile Radio
Parameter
LNA Mode
Bypass Mode
Units
Min.
Typ.
Max.
Min.
Typ.
Max.
Min.
Typ.
Max.
Frequency Range
810 - 960
700 - 1000
MHz
Gain
11.5
13.5
10.5
14
-2.8
-2.0
dB
Gain Variation Over Temperature
0.008
0.015
0.008
0.015
0.002
0.004
dB / °C
Noise Figure
0.9
1.3
1.0
1.4
dB
Input Return Loss
28
25
30
dB
Output Return Loss
12
11
25
dB
Reverse Isolation
20
19
dB
Power for 1dB Compression (P1dB)*
18
21
17
20
30
dBm
Saturated Output Power (Psat)
22.5
22
dBm
Third Order Intercept (IP3)*
(-20 dBm Input Power per tone, 1 MHz tone spacing)
35.5
35
50
dBm
Supply Current (Idd)
90
0.01
mA
* P1dB and IP3 for LNA Mode are referenced to RFOUT while P1dB and IP3 for Bypass Mode are referenced to RFIN.
相关PDF资料 |
PDF描述 |
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| HMC373LP3E | 700 MHz - 1000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER |
| HMC375LP3 | 1700 MHz - 2200 MHz RF/MICROWAVE NARROW BAND LOW POWER AMPLIFIER |
| HMC375LP3E | 1700 MHz - 2200 MHz RF/MICROWAVE NARROW BAND LOW POWER AMPLIFIER |
| HMC376LP3E | 700 MHz - 1000 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER |
| HMC376LP3 | 700 MHz - 1000 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER |
相关代理商/技术参数 |
参数描述 |
|---|---|
| HMC373LP3_06 | 制造商:HITTITE 制造商全称:Hittite Microwave Corporation 功能描述:GaAs PHEMT MMIC LOW NOISE AMPLIFIER w/ BYPASS MODE, 700 - 1000 MHz |
| HMC373LP3_10 | 制造商:HITTITE 制造商全称:Hittite Microwave Corporation 功能描述:GaAs PHEMT MMIC LOW NOISE AMPLIFIER w/ BYPASS MODE, 700 - 1000 MHz |
| HMC373LP3E | 制造商:Hittite Microwave Corp 功能描述:IC MMIC AMP LNA HI IP3 16-QFN |
| HMC373LP3ETR | 制造商:Hittite Microwave Corp 功能描述:HMC373 Series 0.7 - 1 GHz GaAs PHEMT MMIC Low Noise Amplifier - 3x3 mm QFN-16 |
| HMC374 | 制造商:HITTITE 制造商全称:Hittite Microwave Corporation 功能描述:SMT PHEMT LOW NOISE AMPLIFIER, 0.3 - 3.0 GHz |
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