参数资料
型号: HMC375LP3
厂商: HITTITE MICROWAVE CORP
元件分类: 放大器
英文描述: 1700 MHz - 2200 MHz RF/MICROWAVE NARROW BAND LOW POWER AMPLIFIER
封装: 3 X 3 MM, LEADLESS, PLASTIC, SMT, QFN-16
文件页数: 4/6页
文件大小: 213K
代理商: HMC375LP3
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
A
M
P
L
IF
IE
R
S
-
L
O
W
NO
IS
E
-
SM
T
7
7 - 77
Typical Supply Current vs. Vdd
Vdd (Vdc)
Idd (mA)
+4.5
135
+5.0
136
+5.5
137
Drain Bias Voltage (Vdd1, Vdd2)
+8.0 Vdc
RF Input Power (RFIN)(Vs = +5.0 Vdc)
+10 dBm
Channel Temperature
150 °C
Continuous Pdiss (T = 85 °C)
(derate 15.6 mW/°C above 85 °C)
1.015 W
Thermal Resistance
(channel to ground paddle)
64.1 °C/W
Storage Temperature
-65 to +150 °C
Operating Temperature
-40 to +85 °C
Absolute Maximum Ratings
Outline Drawing
HMC375LP3 / 375LP3E
GaAs PHEMT MMIC LOW NOISE
AMPLIFIER, 1.7 - 2.2 GHz
v03.0610
NOTES:
1. LEADFRAME MATERIAL: COPPER ALLOY
2. DIMENSIONS ARE IN INCHES [MILLIMETERS]
3. LEAD SPACING TOLERANCE IS NON-CUMULATIVE
4. PAD BURR LENGTH SHALL BE 0.15mm MAXIMUM.
PAD BURR HEIGHT SHALL BE 0.05mm MAXIMUM.
5. PACKAGE WARP SHALL NOT EXCEED 0.05mm.
6. ALL GROUND LEADS AND GROUND PADDLE MUST BE SOLDERED TO PCB RF GROUND.
7. REFER TO HITTITE APPLICATION NOTE FOR SUGGESTED LAND PATTERN.
Part Number
Package Body Material
Lead Finish
MSL Rating
Package Marking
[3]
HMC375LP3
Low Stress Injection Molded Plastic
Sn/Pb Solder
MSL1
[1]
375
XXXX
HMC375LP3E
RoHS-compliant Low Stress Injection Molded Plastic
100% matte Sn
MSL1
[2]
375
XXXX
[1] Max peak reflow temperature of 235 °C
[2] Max peak reflow temperature of 260 °C
[3] 4-Digit lot number XXXX
Package Information
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
相关PDF资料
PDF描述
HMC375LP3E 1700 MHz - 2200 MHz RF/MICROWAVE NARROW BAND LOW POWER AMPLIFIER
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HMC376LP3 700 MHz - 1000 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER
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