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参数资料
| 型号： | HMC382LP3 |
| 厂商： | HITTITE MICROWAVE CORP |
| 元件分类： | 放大器 |
| 英文描述： | 1700 MHz - 2200 MHz RF/MICROWAVE NARROW BAND LOW POWER AMPLIFIER |
| 封装： | PLASTIC PACKAGE-16 |
| 文件页数： | 3/6页 |
| 文件大小： | 208K |
| 代理商： | HMC382LP3 |
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
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7
7 - 3
Typical Supply Current vs. Vdd1 & Vdd2
Vdd (Vdc)
Idd (mA)
+4.5
67.2
+5.0
67.4
+5.5
67.6
Drain Bias Voltage (Vdd1, Vdd2)
+8.0 Vdc
RF Input Power (RFIN)(Vs = +5.0 Vdc)
+10 dBm
Channel Temperature
150 °C
Continuous Pdiss (T = 85 °C)
(derate 6.94 mW/°C above 85 °C)
0.451 W
Thermal Resistance
(channel to ground paddle)
144 °C/W
Storage Temperature
-65 to +150 °C
Operating Temperature
-40 to +85 °C
Absolute Maximum Ratings
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
HMC382LP3 / 382LP3E
v01.0610
Recommended Bias Resistor Values
for Various Idd1 & Idd2
Idd1 + Idd2 (mA)
Rbias (Ohms)
60
27
70
16
80
13
100
8.2
120
3.9
GaAs PHEMT MMIC
LOW NOISE AMPLIFIER, 1.7 - 2.2 GHz
Gain, Noise Figure & P1dB vs.
Supply Current @ 1900 MHz
12
14
16
18
20
22
24
0.2
0.4
0.6
0.8
1
1.2
1.4
60
70
80
90
100
110
120
GAIN
P1dB
Noise Figure
GAIN
(dB)
&
P1dB
(dBm)
NOISE
FIGURE
(dB)
SUPPLY CURRENT (mA)
P1dB vs. Temperature @ Idd = 67 mA
Output IP3 vs. Temperature Idd = @ 67 mA
Psat vs. Temperature @ Idd = 67 mA
10
12
14
16
18
20
1.7
1.8
1.9
2
2.1
2.2
+25 C
+85 C
-40 C
P1dB
(dBm)
FREQUENCY (GHz)
20
22
24
26
28
30
32
34
1.7
1.8
1.9
2
2.1
2.2
+25 C
+85 C
-40 C
IP3
(dBm)
FREQUENCY (GHz)
10
12
14
16
18
20
1.7
1.8
1.9
2
2.1
2.2
+25 C
+85 C
-40 C
Psat
(dBm)
FREQUENCY (GHz)
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相关代理商/技术参数 |
参数描述 |
|---|---|
| HMC382LP3_10 | 制造商:HITTITE 制造商全称:Hittite Microwave Corporation 功能描述:GaAs PHEMT MMIC LOW NOISE AMPLIFIER, 1.7 - 2.2 GHz |
| HMC382LP3E | 制造商:Hittite Microwave Corp 功能描述:IC MMIC AMP LNA HI IP3 16-QFN |
| HMC382LP3ETR | 功能描述:RF Amplifier IC General Purpose 1.7GHz ~ 2.2GHz 16-QFN (3x3) 制造商:analog devices inc. 系列:- 包装:剪切带（CT） 零件状态:有效 频率:1.7GHz ~ 2.2GHz P1dB:16dBm 增益:17dB 噪声系数:1dB RF 类型:通用 电压 - 电源:5V 电流 - 电源:67mA 测试频率:1.8GHz 封装/外壳:16-VFQFN 裸露焊盘 供应商器件封装:16-QFN（3x3） 标准包装:1 |
| HMC383 | 制造商:HITTITE 制造商全称:Hittite Microwave Corporation 功能描述:GaAs PHEMT MMIC MEDIUM POWER AMPLIFIER, 12 - 30 GHz |
| HMC383_09 | 制造商:HITTITE 制造商全称:Hittite Microwave Corporation 功能描述:GaAs PHEMT MMIC MEDIUM POWER AMPLIFIER, 12 - 30 GHz |
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