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参数资料
| 型号： | HMC405 |
| 厂商： | HITTITE MICROWAVE CORP |
| 元件分类： | 放大器 |
| 英文描述： | 0 MHz - 10000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER |
| 封装： | 0.58 X 0.38 MM, 0.10 MM HEIGHT, DIE-2 |
| 文件页数： | 6/6页 |
| 文件大小： | 178K |
| 代理商： | HMC405 |
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For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
Assembly Diagram
Handling Precautions
Follow these precautions to avoid permanent damage.
Storage: All bare die are placed in either Waffle or Gel based ESD protective containers, and then sealed in an ESD protective bag
for shipment. Once the sealed ESD protective bag has been opened, all die should be stored in a dry nitrogen environment.
Cleanliness: Handle the chips in a clean environment. DO NOT attempt to clean the chip using liquid cleaning systems.
Static Sensitivity: Follow ESD precautions to protect against ESD strikes.
Transients: Suppress instrument and bias supply transients while bias is applied. Use shielded signal and bias cables to minimize
inductive pick-up.
General Handling: Handle the chip along the edges with a vacuum collet or with a sharp pair of bent tweezers. The surface of the
chip has fragile air bridges and should not be touched with vacuum collet, tweezers, or fingers.
Mounting
The chip is back-metallized and can be die mounted with electrically conductive epoxy. The mounting surface should be clean
and flat.
Epoxy Die Attach: Apply a minimum amount of epoxy to the mounting surface so that a thin epoxy fillet is observed around the
perimeter of the chip once it is placed into position. Cure epoxy per the manufacturer’s schedule.
Wire Bonding
Ball or wedge bond with 0.025mm (1 mil) diameter pure gold wire. Thermosonic wirebonding with a nominal stage temperature of
150 deg. C and a ball bonding force of 40 to 50 grams or wedge bonding force of 18 to 22 grams is recommended. Use the minimum
level of ultrasonic energy to achieve reliable wirebonds. Wirebonds should be started on the chip and terminated on the package or
substrate. All bonds should be as short as possible <0.31mm (12 mils).
HMC405
v03.0109
InGaP HBT GAIN BLOCK
MMIC AMPLIFIER, DC - 10 GHz
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| HMC405_07 | 制造商:HITTITE 制造商全称:Hittite Microwave Corporation 功能描述:InGaP HBT GAIN BLOCK MMIC AMPLIFIER, DC - 10 GHz |
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| HMC405-SX | 功能描述:IC HBT GAIN BLOCK AMP DIE 制造商:analog devices inc. 系列:- 包装:托盘 零件状态:在售 频率:0Hz ~ 10GHz P1dB:13dBm 增益:15dB 噪声系数:4.5dB RF 类型:VSAT 电压 - 电源:5V 电流 - 电源:50mA 测试频率:3GHz ~ 7GHz 封装/外壳:模具 供应商器件封装:模具 标准包装:2 |
| HMC4069LP4E | 功能描述:IC PLL FRACTIONAL-N VCO 制造商:analog devices inc. 系列:- 包装:剪切带（CT） 零件状态:新产品 类型:* PLL:是 输入:时钟 输出:时钟 电路数:1 比率 - 输入:输出:1:1 差分 - 输入:输出:是/是 频率 - 最大值:2.9GHz 分频器/倍频器:是/无 电压 - 电源:4.75 V ~ 5.25 V 工作温度:-40°C ~ 85°C 安装类型:表面贴装 封装/外壳:24-VFQFN 裸露焊盘 供应商器件封装:24-QFN（4x4） 标准包装:1 |
| HMC406MS8G | 制造商:HITTITE 制造商全称:Hittite Microwave Corporation 功能描述:GaAs InGaP HBT MMIC POWER AMPLIFIER, 5 - 6 GHz |
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