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参数资料
| 型号： | HMC406MS8GE |
| 厂商： | HITTITE MICROWAVE CORP |
| 元件分类： | 放大器 |
| 英文描述： | 5000 MHz - 6000 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER |
| 封装： | ROHS COMPLIANT, PLASTIC, SMT, 8 PIN |
| 文件页数： | 1/6页 |
| 文件大小： | 216K |
| 代理商： | HMC406MS8GE |
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
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HMC406MS8G / 406MS8GE
GaAs InGaP HBT MMIC
POWER AMPLIFIER, 5 - 6 GHz
v05.1209
General Description
Features
Functional Diagram
The HMC406MS8G(E) is a high efficiency GaAs
InGaP Heterojunction Bipolar Transistor (HBT) MMIC
Power amplifier which operates between 5 and 6
GHz. The amplifier is packaged in a low cost, surface
mount 8 leaded package with an exposed base
for improved RF and thermal performance. With
a minimum of external components, the amplifier
provides 17 dB of gain and +29 dBm of saturated
power at 38% PAE from a +5V supply voltage. Vpd
can be used for full power down or RF output power/
current control.
Gain: 17 dB
Saturated Power: +29 dBm
38% PAE
Supply Voltage: +5V
Power Down Capability
Low External Part Count
Electrical Specifications, T
A = +25° C, Vs = 5V, Vpd = 5V
Typical Applications
The HMC406MS8G(E) is ideal for:
WiMAX & WiLAN
DSRC
Military & Maritime
Private Mobile Radio
UNII & ISM
Parameter
Min.
Typ.
Max.
Min.
Typ.
Max.
Units
Frequency Range
5 - 6
5.7 - 5.9
GHz
Gain
13
16
21
14
17
21
dB
Gain Variation Over Temperature
0.03
0.04
0.03
0.04
dB/ °C
Input Return Loss
10
11
dB
Output Return Loss
8
9
dB
Output Power for 1 dB Compression (P1dB)
21
24
27
dBm
Saturated Output Power (Psat)
27
29
dBm
Output Third Order Intercept (IP3)
34
38
34
38
dBm
Noise Figure
6.0
dB
Supply Current (Icq)
Vpd = 0V/5V
0.002 / 300
mA
Control Current (Ipd)
Vpd = 5V
7
mA
Switching Speed
tON, tOFF
35
ns
相关PDF资料 |
PDF描述 |
|---|---|
| HMC407MS8GETR | 5000 MHz - 7000 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER |
| HMC407MS8G | 5000 MHz - 7000 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER |
| HMC407MS8GE | 5000 MHz - 7000 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER |
| HMC410MS8G | 9000 MHz - 15000 MHz RF/MICROWAVE DOUBLE BALANCED MIXER, 11 dB CONVERSION LOSS-MAX |
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相关代理商/技术参数 |
参数描述 |
|---|---|
| HMC407MS8G | 制造商:HITTITE 制造商全称:Hittite Microwave Corporation 功能描述:GaAs InGaP HBT MMIC POWER AMPLIFIER, 5 - 7 GHz |
| HMC407MS8G_07 | 制造商:HITTITE 制造商全称:Hittite Microwave Corporation 功能描述:GaAs InGaP HBT MMIC POWER AMPLIFIER, 5.0 - 7.0 GHz |
| HMC407MS8G_09 | 制造商:HITTITE 制造商全称:Hittite Microwave Corporation 功能描述:GaAs InGaP HBT MMIC POWER AMPLIFIER, 5 - 7 GHz |
| HMC407MS8GE | 功能描述:POWER AMP 5-6GHZ INGAP 8MSOP RoHS:是 类别:RF/IF 和 RFID >> RF 放大器 系列:- 标准包装:3,000 系列:- 频率:100MHz ~ 6GHz P1dB:9.14dBm（8.2mW） 增益:15.7dB 噪音数据:1.3dB RF 型:CDMA，TDMA，PCS 电源电压:2.7 V ~ 5 V 电流 - 电源:60mA 测试频率:2GHz 封装/外壳:0505（1412 公制） 包装:带卷 (TR) |
| HMC407MS8GETR | 制造商:Hittite Microwave Corp 功能描述:POWER AMP 5-6GHZ INGAP 8MSOP 制造商:Hittite Microwave Corp 功能描述:HMC407 Series 5.0 - 7.0 GHz GaAs InGaP HBT MMIC Power Amplifier - MSOP-8EP |
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