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参数资料
| 型号： | HMC409LP4 |
| 厂商： | HITTITE MICROWAVE CORP |
| 元件分类： | 放大器 |
| 英文描述： | 3300 MHz - 3800 MHz RF/MICROWAVE NARROW BAND MEDIUM POWER AMPLIFIER |
| 封装： | LEADLESS, PLASTIC, SMT, 24 PIN |
| 文件页数： | 5/8页 |
| 文件大小： | 700K |
| 代理商： | HMC409LP4 |
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
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Outline Drawing
noTes:
1. leADfrAme mATeriAl: Copper AlloY
2. Dimensions Are in inCHes [millimeTers]
3. leAD spACinG TolerAnCe is non-CUmUlATiVe.
4. pAD BUrr lenGTH sHAll Be 0.15mm mAXimUm.
pAD BUrr HeiGHT sHAll Be 0.05mm mAXimUm.
5. pACKAGe wArp sHAll noT eXCeeD 0.05mm.
6. All GroUnD leADs AnD GroUnD pADDle mUsT Be
solDereD To pCB rf GroUnD.
7. refer To HiTTiTe AppliCATion noTe for sUGGesTeD
lAnD pATTern.
Absolute Maximum Ratings
Collector Bias Voltage (Vcc1, Vcc2)
+5.5 Vdc
Control Voltage (Vpd)
+5.5 Vdc
rf input power (rfin)(Vs = Vpd = +5Vdc)
+10 dBm
Junction Temperature
150 °C
Continuous pdiss (T = 85 °C)
(derate 57.5 mw/°C above 85 °C)
3.74 w
Thermal resistance
(junction to ground paddle)
17.4 °C/w
storage Temperature
-65 to +150 °C
operating Temperature
-40 to +85 °C
Vs (Vdc)
icq (mA)
4.75
516
5.0
615
5.25
721
Typical Supply, Current vs. Supply
Voltage, Vcc1 = Vcc2 = Vpd
HMC409LP4 / 409LP4E
GaAs InGaP HBT 1 WATT
POWER AMPLIFIER, 3.3 - 3.8 GHz
v03.0710
part number
package Body material
lead finish
msl rating
package marking [3]
HmC409lp4
low stress injection molded plastic
sn/pb solder
msl3
[1]
H409
XXXX
HmC409lp4e
roHs-compliant low stress injection molded plastic
100% matte sn
msl3
[2]
H409
XXXX
[1] max peak reflow temperature of 235 °C
[2] max peak reflow temperature of 260 °C
[3] 4-Digit lot number XXXX
Package Information
eleCTrosTATiC sensiTiVe DeViCe
oBserVe HAnDlinG preCAUTions
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PDF描述 |
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| HMC409LP4E | 3300 MHz - 3800 MHz RF/MICROWAVE NARROW BAND MEDIUM POWER AMPLIFIER |
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相关代理商/技术参数 |
参数描述 |
|---|---|
| HMC409LP4_10 | 制造商:HITTITE 制造商全称:Hittite Microwave Corporation 功能描述:GaAs InGaP HBT 1 WATT POWER AMPLIFIER, 3.3 - 3.8 GHz |
| HMC409LP4E | 制造商:Hittite Microwave Corp 功能描述:IC PWR AMP HBT 1W 24-QFN |
| HMC409LP4ETR | 制造商:Hittite Microwave Corp 功能描述:HP409 Series 3.3 - 3.8 GHz GaAs InGaP HBT 1 Watt Power Amplifier - QFN-24 |
| HMC40DRAH | 功能描述:CONN EDGECARD 80POS R/A .100 SLD RoHS:是 类别:连接器，互连式 >> Card Edge 系列:- 标准包装:1 系列:- 卡类型:非指定 - 双边 类型:母头 Number of Positions/Bay/Row:40 位置数:80 卡厚度:0.031"（0.79mm） 行数:2 间距:0.100"（2.54mm） 特点:- 安装类型:通孔，直角 端子:焊接 触点材料:铜铍 触点表面涂层:金 触点涂层厚度:30µin（0.76µm） 触点类型：:全波纹管 颜色:蓝 包装:管件 法兰特点:顶部安装开口，无螺纹，0.125"（3.18mm）直径 材料 - 绝缘体:聚对苯二甲酸丁二酯（PBT） 工作温度:-65°C ~ 125°C 读数:双 |
| HMC40DRAH-S734 | 功能描述:CONN EDGECARD 80POS .100 R/A PCB RoHS:是 类别:连接器，互连式 >> Card Edge 系列:- 标准包装:1 系列:- 卡类型:非指定 - 双边 类型:母头 Number of Positions/Bay/Row:40 位置数:80 卡厚度:0.031"（0.79mm） 行数:2 间距:0.100"（2.54mm） 特点:- 安装类型:通孔，直角 端子:焊接 触点材料:铜铍 触点表面涂层:金 触点涂层厚度:30µin（0.76µm） 触点类型：:全波纹管 颜色:蓝 包装:管件 法兰特点:顶部安装开口，无螺纹，0.125"（3.18mm）直径 材料 - 绝缘体:聚对苯二甲酸丁二酯（PBT） 工作温度:-65°C ~ 125°C 读数:双 |
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