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参数资料
| 型号： | HMC415LP3 |
| 厂商： | HITTITE MICROWAVE CORP |
| 元件分类： | 放大器 |
| 英文描述： | 4900 MHz - 5900 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER |
| 封装： | LEADLESS, PLASTIC, SMT, 16 PIN |
| 文件页数： | 1/8页 |
| 文件大小： | 272K |
| 代理商： | HMC415LP3 |
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
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HMC415LP3 / 415LP3E
GaAs InGaP HBT MMIC
POWER AMPLIFIER, 4.9 - 5.9 GHz
v03.0605
General Description
Features
Functional Diagram
The HMC415LP3 & HMC415LP3E are high effi-
ciency GaAs InGaP Heterojunction Bipolar Tran-
sistor (HBT) MMIC Power amplifiers which operate
between 4.9 and 5.9 GHz. The amplifier is pack-
aged in a low cost, leadless surface mount pack-
age with an exposed base for improved RF and
thermal performance. With a minimum of external
components, the amplifier provides 20 dB of gain,
+26 dBm of saturated power, and 34% PAE from a
+3V supply voltage. Vpd can be used for full power
down or RF output power/current control.
For +15
dBm OFDM output power (64 QAM, 54 Mbps), the
HMC415LP3
&
HMC415LP3E
achieve
an
error
vector magnitude (EVM) of 3.7% meeting 802.11a
linearity requirements.
Gain: 20 dB
34% PAE @ Psat = +26 dBm
3.7% EVM @ Pout = +15 dBm
with 54 Mbps OFDM Signal
Supply Voltage: +3V
Power Down Capability
Low External Part Count
Electrical Specifications, T
A = +25° C, Vs = 3V, Vpd = 3V
Typical Applications
This amplifier is ideal for use as a power
amplifier for 4.9 - 5.9 GHz applications:
802.11a WLAN
HiperLAN WLAN
Access Points
UNII & ISM Radios
Parameter
Min.
Typ.
Max.
Min.
Typ.
Max.
Min.
Typ.
Max.
Units
Frequency Range
4.9 - 5.1
5.1 - 5.4
5.4 - 5.9
GHz
Gain
18
20
18.5
20.5
16
19
dB
Gain Variation Over Temperature
0.04
0.05
0.04
0.05
0.04
0.05
dB /
°C
Input Return Loss
10
9
8
dB
Output Return Loss
10
12
8
dB
Output Power for 1dB
Compression (P1dB)
Icq = 285 mA
Icq = 200 mA
20
22.5
22.0
20.5
23.0
22.5
18
21.5
21.0
dBm
Saturated Output Power (Psat)
25.5
26
24
dBm
Output Third Order Intercept (IP3)
28
31
29
32
27
30
dBm
Error Vector Magnitude
(54 Mbps OFDM Signal @ +15 dBm Pout)
Icq = 200 mA
3.7
%
Noise Figure
6
dB
Supply Current (Icq)
Vpd = 0V/3V
0.002 /
285
0.002 /
285
0.002 /
285
mA
Control Current (Ipd)
Vpd = 3V
7
mA
Switching Speed
tOn, tOff
45
ns
相关PDF资料 |
PDF描述 |
|---|---|
| HMC415LP3E | 4900 MHz - 5900 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER |
| HMC424LP3TR | 0 MHz - 13000 MHz RF/MICROWAVE VARIABLE ATTENUATOR, 4.6 dB INSERTION LOSS-MAX |
| HMC424LP3ETR | 0 MHz - 13000 MHz RF/MICROWAVE VARIABLE ATTENUATOR, 4.6 dB INSERTION LOSS-MAX |
| HMC424LP3 | 0 MHz - 13000 MHz RF/MICROWAVE VARIABLE ATTENUATOR, 4.6 dB INSERTION LOSS-MAX |
| HMC424LP3E | 0 MHz - 13000 MHz RF/MICROWAVE VARIABLE ATTENUATOR, 4.6 dB INSERTION LOSS-MAX |
相关代理商/技术参数 |
参数描述 |
|---|---|
| HMC415LP3_09 | 制造商:HITTITE 制造商全称:Hittite Microwave Corporation 功能描述:GaAs InGaP HBT MMIC POWER AMPLIFIER, 4.9 - 5.9 GHz |
| HMC415LP3E | 制造商:Hittite Microwave Corp 功能描述:IC PWR AMP 5-6GHZ 16-QFN |
| HMC415LP3ETR | 制造商:Hittite Microwave Corp 功能描述:HMC415 Series 4.9 - 5.9 GHz GaAs InGaP HBT MMIC Power Amplifier - QFN-16 |
| HMC416LP4 | 制造商:HITTITE 制造商全称:Hittite Microwave Corporation 功能描述:MMIC VCO w/ BUFFER AMPLIFIER, 2.75 - 3.0 GHz |
| HMC416LP4_08 | 制造商:HITTITE 制造商全称:Hittite Microwave Corporation 功能描述:MMIC VCO w/ BUFFER AMPLIFIER, 2.75 - 3.0 GHz |
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