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参数资料
| 型号： | HMC462LP5 |
| 厂商： | HITTITE MICROWAVE CORP |
| 元件分类： | 放大器 |
| 英文描述： | 2000 MHz - 20000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER |
| 封装： | LEADLESS , PLASTIC, SMT, 32 PIN |
| 文件页数： | 1/6页 |
| 文件大小： | 668K |
| 代理商： | HMC462LP5 |
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
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HMC462LP5 / 462LP5E
GaAs pHEMT MMIC
LOW NOISE AMPLIFIER, 2 - 20 GHz
v04.1010
General Description
Features
Functional Diagram
The HMC462LP5 & HMC462LP5E are GaAs MMIC
pHEMT Low Noise Distributed Amplifiers in leadless
5x5 mm surface mount packages which operate
between 2 and 20 GHz. The self-biased amplifier
provides 13 dB of gain, 2.5 to 3.5 dB noise figure and
+14.5 dBm of output power at 1 dB gain compression
while requiring only 66 mA from a single +5V supply.
Gain flatness is excellent from 6 - 18 GHz making
the HMC462LP5 & HMC462LP5E ideal for EW,
ECM RADAR and test equipment applications. The
wideband amplifier I/Os are internally matched to 50
Ohms and are internally DC blocked.
Noise Figure: 2.5 dB @ 10 GHz
Gain: 13 dB
P1dB Output Power: +14.5 dBm @ 10 GHz
Self-Biased: +5V @ 66mA
50 Ohm Matched Input/Output
25 mm2 Leadless SMT Package
Typical Applications
The HMC462LP5 / HMC462LP5E Wideband LNA is
ideal for:
Telecom Infrastructure
Microwave Radio & VSAT
Military EW, ECM & C3I
Test Instrumentation
Fiber Optics
Electrical Specifications, T
A = +25° C, Vdd= 5V
Parameter
Min.
Typ.
Max.
Min.
Typ.
Max.
Min.
Typ.
Max.
Units
Frequency Range
2 - 6
6 - 14
14 - 20
GHz
Gain
12
14
11
13
10
12
dB
Gain Flatness
±0.5
dB
Gain Variation Over Temperature
0.015
0.025
0.02
0.03
0.04
dB/ °C
Noise Figure
3.0
4.0
2.5
4.0
6.0
dB
Input Return Loss
15
13
11
dB
Output Return Loss
12
8
dB
Output Power for 1 dB Compression (P1dB)
12
15
11
14
9
12
dBm
Saturated Output Power (Psat)
17
16
15
dBm
Output Third Order Intercept (IP3)
26
25
22
dBm
Supply Current
(Idd) (Vdd= 5V)
66
85
66
85
66
85
mA
相关PDF资料 |
PDF描述 |
|---|---|
| HMC462LP5E | 2000 MHz - 20000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER |
| HMC463 | 2000 MHz - 20000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER |
| HMC472LP4TR | 0 MHz - 3800 MHz RF/MICROWAVE VARIABLE ATTENUATOR, 3 dB INSERTION LOSS-MAX |
| HMC472LP4ETR | 0 MHz - 3800 MHz RF/MICROWAVE VARIABLE ATTENUATOR, 3 dB INSERTION LOSS-MAX |
| HMC472LP4E | 0 MHz - 3800 MHz RF/MICROWAVE VARIABLE ATTENUATOR, 3 dB INSERTION LOSS-MAX |
相关代理商/技术参数 |
参数描述 |
|---|---|
| HMC462LP5_10 | 制造商:HITTITE 制造商全称:Hittite Microwave Corporation 功能描述:GaAs pHEMT MMIC LOW NOISE AMPLIFIER, 2 - 20 GHz |
| HMC462LP5E | 制造商:Hittite Microwave Corp 功能描述:IC MMIC LNA GAAS PHEMT 32-QFN |
| HMC462LP5ETR | 制造商:Hittite Microwave Corp 功能描述:IC MMIC LNA GAAS PHEMT 32-QFN |
| HMC462-SX | 功能描述:RF Amplifier IC General Purpose 2GHz ~ 20GHz Die 制造商:analog devices inc. 系列:- 包装:托盘 零件状态:有效 频率:2GHz ~ 20GHz P1dB:14.5dBm 增益:15dB 噪声系数:2.5dB RF 类型:通用 电压 - 电源:5V 电流 - 电源:63mA 测试频率:- 封装/外壳:模具 供应商器件封装:模具 标准包装:2 |
| HMC463 | 制造商:HITTITE 制造商全称:Hittite Microwave Corporation 功能描述:GaAs PHEMT MMIC LOW NOISE AMPLIFIER, DC - 20.0 GHz |
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