参数资料
型号: HMC463
厂商: HITTITE MICROWAVE CORP
元件分类: 放大器
英文描述: 2000 MHz - 20000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER
封装: 3.05 X 1.29 MM, 0.10 MM HEIGHT, GP-2, DIE-5
文件页数: 3/8页
文件大小: 304K
代理商: HMC463
A
M
P
L
IF
IE
R
S
-
L
O
W
NO
IS
E
-
C
H
IP
1
1 - 3
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
P1dB vs. Temperature
Psat vs. Temperature
Output IP3 vs. Temperature
Gain, Power & Noise Figure
vs. Supply Voltage @ 10 GHz, Fixed Vgg1
10
13
16
19
22
25
0
2
4
6
8
10
12
14
16
18
20
22
+25C
+85C
-55C
P1dB
(dBm)
FREQUENCY (GHz)
10
13
16
19
22
25
0
2
4
6
8
10
12
14
16
18
20
22
+25C
+85C
-55C
Psat
(dBm)
FREQUENCY (GHz)
20
23
26
29
32
35
0
2
4
6
8
10
12
14
16
18
20
22
+25C
+85C
-55C
IP3
(dBm)
FREQUENCY (GHz)
12
13
14
15
16
17
18
19
20
21
22
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
5
4.5
4.75
5
5.25
5.5
Gain
P1dB
Noise Figure
GAIN
(dB),
P1dB
(dBm)
NOI
SE
FI
GURE
(dB)
Vdd (V)
Gain, P1dB & Output IP3
vs. Control Voltage @ 10 GHz
Noise Figure & Supply Current
vs. Control Voltage @ 10 GHz
0
4
8
12
16
20
24
28
32
-1.2
-1
-0.8 -0.6 -0.4 -0.2
0
0.2
0.4
0.6
0.8
1
Gain
P1dB
IP3
GAIN
(dB),
P1dB
(dBm),
IP3
(dBm)
Vgg2 (V)
20
30
40
50
60
70
0
1
2
3
4
5
-1.2
-1
-0.8 -0.6 -0.4 -0.2
0
0.2
0.4
0.6
0.8
1
Idd
Noise Figure
Idd
(mA)
NOI
SE
FI
GURE
(dB)
Vgg2 (V)
HMC463
v10.1010
GaAs PHEMT MMIC LOW NOISE
AGC AMPLIFIER, 2 - 20 GHz
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