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参数资料
| 型号： | HMC464LP5E |
| 厂商： | HITTITE MICROWAVE CORP |
| 元件分类： | 放大器 |
| 英文描述： | 2000 MHz - 20000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER |
| 封装： | 5 X 5 MM, ROHS COMPLIANT, LEADLESS, PLASTIC, SMT, 32 PIN |
| 文件页数： | 3/6页 |
| 文件大小： | 236K |
| 代理商： | HMC464LP5E |
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
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SM
T
P1dB vs. Temperature
Psat vs. Temperature
Output IP3 vs. Temperature
Gain, Power & Output IP3
vs. Supply Voltage @ 10 GHz, Fixed Vgg1
Absolute Maximum Ratings
Drain Bias Voltage (Vdd)
+9 Vdc
Gate Bias Voltage (Vgg1)
-2 to 0 Vdc
Gate Bias Voltage (Vgg2)
(Vdd -8.0) Vdc to Vdd
RF Input Power (RFIN)(Vdd = +8 Vdc)
+20 dBm
Channel Temperature
150 °C
Continuous Pdiss (T= 85 °C)
(derate 51.5 mW/°C above 85 °C)
3.35 W
Thermal Resistance
(channel to ground paddle)
19.4 °C/W
Storage Temperature
-65 to +150 °C
Operating Temperature
-40 to +85 °C
ESD Sensitivity (HBM)
Class 1A
Vdd (V)
Idd (mA)
+7.5
292
+8.0
290
+8.5
288
Typical Supply Current vs. Vdd
10
12
14
16
18
20
22
24
26
28
30
0
2
4
6
8
10
12
14
16
18
20
22
+25C
+85C
-40C
P1dB
(dBm)
FREQUENCY (GHz)
10
12
14
16
18
20
22
24
26
28
30
0
2
4
6
8
10
12
14
16
18
20
22
+25C
+85C
-40C
Psat
(dBm)
FREQUENCY (GHz)
16
18
20
22
24
26
28
30
32
34
36
0
2
4
6
8
10
12
14
16
18
20
22
+25C
+85C
-40C
IP3
(dBm)
FREQUENCY (GHz)
10
12
14
16
18
20
22
24
26
28
30
32
7.5
8
8.5
Gain
P1dB
Psat
IP3
Gain
(dB),
P1dB
(dBm),
Psat
(dBm),
IP3
(dBm
)
Vdd (V)
HMC464LP5 / 464LP5E
GaAs PHEMT MMIC
POWER AMPLIFIER, 2 - 20 GHz
v03.0308
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
相关PDF资料 |
PDF描述 |
|---|---|
| HMC466LP4 | 6100 MHz - 6720 MHz RF/MICROWAVE NARROW BAND LOW POWER AMPLIFIER |
| HMC470LP3TR | 0 MHz - 3000 MHz RF/MICROWAVE VARIABLE ATTENUATOR, 2 dB INSERTION LOSS-MAX |
| HMC470LP3ETR | 0 MHz - 3000 MHz RF/MICROWAVE VARIABLE ATTENUATOR, 2 dB INSERTION LOSS-MAX |
| HMC470LP3E | 0 MHz - 3000 MHz RF/MICROWAVE VARIABLE ATTENUATOR, 2 dB INSERTION LOSS-MAX |
| HMC470LP3 | 0 MHz - 3000 MHz RF/MICROWAVE VARIABLE ATTENUATOR, 2 dB INSERTION LOSS-MAX |
相关代理商/技术参数 |
参数描述 |
|---|---|
| HMC464-SX | 功能描述:RF Amplifier IC General Purpose 2GHz ~ 20GHz Die 制造商:analog devices inc. 系列:- 包装:托盘 零件状态:有效 频率:2GHz ~ 20GHz P1dB:26dBm 增益:16dB 噪声系数:4dB RF 类型:通用 电压 - 电源:8V 电流 - 电源:290mA 测试频率:- 封装/外壳:模具 供应商器件封装:模具 标准包装:2 |
| HMC465 | 制造商:HITTITE 制造商全称:Hittite Microwave Corporation 功能描述:ACTIVE BIAS CONTROLLER |
| HMC465_10 | 制造商:HITTITE 制造商全称:Hittite Microwave Corporation 功能描述:GaAs pHEMT MMIC MODULATOR DRIVER AMPLIFIER, DC - 20 GHz |
| HMC465LP5 | 制造商:HITTITE 制造商全称:Hittite Microwave Corporation 功能描述:ACTIVE BIAS CONTROLLER |
| HMC465LP5_10 | 制造商:HITTITE 制造商全称:Hittite Microwave Corporation 功能描述:GaAs PHEMT MMIC MODULATOR DRIVER AMPLIFIER, DC - 20 GHz |
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