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参数资料
| 型号： | HMC475ST89E |
| 厂商： | HITTITE MICROWAVE CORP |
| 元件分类： | 放大器 |
| 英文描述： | 0 MHz - 4500 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER |
| 封装： | ROHS COMPLIANT, PLASTIC, SOT-89, SMT, 3 PIN |
| 文件页数： | 3/6页 |
| 文件大小： | 202K |
| 代理商： | HMC475ST89E |
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
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8 - 76
Gain, Power & OIP3 vs. Supply Voltage
for Constant Icc= 110 mA @ 850 MHz
P1dB vs. Temperature
Psat vs. Temperature
Output IP3 vs. Temperature
Vcc vs. Icc Over Temperature for
Fixed Vs= 8V, RBIAS= 9.1 Ohms
0
4
8
12
16
20
24
28
01
23
45
+25C
+85C
-40C
P1dB
(dBm)
FREQUENCY (GHz)
0
4
8
12
16
20
24
28
01
23
45
+25C
+85C
-40C
Psat
(dBm)
FREQUENCY (GHz)
HMC475ST89 / 475ST89E
v02.0710
0
6
12
18
24
30
36
42
8
9
10
11
12
Gain
P1dB
Psat
IP3
GAIN
(dB),
P1dB
(dBm),
Psat
(dBm),
IP3
(dBm)
Vs (Vdc)
75
80
85
90
95
100
105
110
115
120
125
130
135
140
6.9
7
7.1
7.2
7.3
7.4
7.5
Icc
(mA)
Vcc (Vdc)
+85C
+25C
-40C
15
20
25
30
35
40
45
01
23
45
+25C
+85C
-40C
IP3
(dBm)
FREQUENCY (GHz)
InGaP HBT GAIN BLOCK
MMIC AMPLIFIER, DC - 4.5 GHz
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相关代理商/技术参数 |
参数描述 |
|---|---|
| HMC475ST89ETR | 制造商:Hittite Microwave Corp 功能描述:IC MMIC AMP HBT 4.5GHZ SOT-89 制造商:Hittite Microwave Corp 功能描述:HMC475 Series DC - 4.5 GHz HBT MMIC Gain Block Amplifier - SOT-89 |
| HMC476MP86 | 制造商:HITTITE 制造商全称:Hittite Microwave Corporation 功能描述:SiGe HBT GAIN BLOCK MMIC AMPLIFIER, DC - 6.0 GHz |
| HMC476MP86_10 | 制造商:HITTITE 制造商全称:Hittite Microwave Corporation 功能描述:SiGe HBT GAIN BLOCK MMIC AMPLIFIER, DC - 6 GHz |
| HMC476MP86E | 制造商:Hittite Microwave Corp 功能描述:IC MMIC AMP HBT 6GHZ MICRO-P |
| HMC476MP86ETR | 功能描述:RF Amplifier IC Cellular, CATV 0Hz ~ 6GHz 制造商:analog devices inc. 系列:- 包装:剪切带（CT） 零件状态:生命周期结束 频率:0Hz ~ 6GHz P1dB:12dBm 增益:20dB 噪声系数:2.5dB ~ 3.5dB RF 类型:手机，CATV 电压 - 电源:5 V ~ 12 V 电流 - 电源:35mA 测试频率:- 封装/外壳:SOT-86 供应商器件封装:- 标准包装:1 |
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