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参数资料
| 型号： | HMC478SC70E |
| 厂商： | Hittite Microwave Corporation |
| 文件页数： | 5/6页 |
| 文件大小： | 0K |
| 描述： | IC GAIN BLOCK AMP SC70 |
| 标准包装： | 1 |
| 系列： | SIGe |
| 频率： | 0Hz ~ 4GHz |
| P1dB： | 12dBm |
| 增益： | 15dB |
| 噪音数据： | 2.8dB |
| RF 型： | 通用 |
| 电源电压： | 5 V ~ 8 V |
| 电流 - 电源： | 82mA |
| 封装/外壳： | 6-TSSOP，SC-88，SOT-363 |
| 包装： | 标准包装 |
| 其它名称： | 1127-1049-6 |
HMC478SC70 / 478SC70E
v01.0811
SiGe HBT GAIN BLOCK
MMIC AMPLIFIER, DC - 4 GHz
8
Pin Descriptions
Pin Number Function
1, 2, 4, 5 GND
3
RFIN
6
RFOUT
Description
These pins must be connected to RF/DC ground.
This pin is DC coupled.
An off chip DC blocking capacitor is required.
RF output and DC Bias (Vcc) for the output stage.
Interface Schematic
Application Circuit
Recommended Bias Resistor Values
for Icc= 62 mA, Rbias= (Vs - Vcc) / Icc
Supply Voltage (Vs)
R BIAS V ALUE
R BIAS P OWER R ATING
5V
18 Ω
1/8 W
6V
35 Ω
1/4 W
8V
67 Ω
1/2 W
Note:
1. External blocking capacitors are required on
RFIN and RFOUT.
2. R BIAS provides DC bias stability over temperature.
Recommended Component Values for Key Application Frequencies
Component
50
900
Frequency (MHz)
1900 2200
2400
3500
L1
C1, C2
270 nH
0.01 μF
56 nH
100 pF
18 nH
100 pF
18 nH
100 pF
15 nH
100 pF
8.2 nH
100 pF
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
8-5
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
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相关代理商/技术参数 |
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| HMC478SC70ETR | 制造商:Hittite Microwave Corp 功能描述:IC GAIN BLOCK AMP SC70 制造商:Hittite Microwave Corp 功能描述:HMC478 Series DC - 4 GHz SiGe HBT Gain Block MMIC Amplifier - SC70 |
| HMC478ST89 | 制造商:HITTITE 制造商全称:Hittite Microwave Corporation 功能描述:SiGe HBT GAIN BLOCK MMIC AMPLIFIER, DC - 4.0 GHz |
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| HMC478ST89E | 制造商:Hittite Microwave Corp 功能描述:IC MMIC AMP HBT 4GHZ SOT-89 |
| HMC478ST89ETR | 制造商:Hittite Microwave Corp 功能描述:HMC478 Series DC - 4 GHz SiGe HBT Gain Block MMIC Amplifier - SOT-89 |
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