参数资料
型号: HMC478ST89E
厂商: 美国讯泰微波有限公司上海代表处
英文描述: SiGe HBT GAIN BLOCK MMIC AMPLIFIER, DC - 4.0 GHz
中文描述: SiGe HBT增益块MMIC放大器,直流- 4.0吉赫
文件页数: 5/6页
文件大小: 340K
代理商: HMC478ST89E
A
5
5 - 442
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
Application Circuit
Pin Descriptions
Recommended Component Values for Key Application Frequencies
Component
Frequency (MHz)
50
900
1900
2200
2400
3500
L1
270 nH
56 nH
18 nH
18 nH
15 nH
8.2 nH
C1, C2
0.01 μF
100 pF
100 pF
100 pF
100 pF
100 pF
Note:
1. External blocking capacitors are required on
RFIN and RFOUT.
2. R
BIAS
provides DC bias stability over temperature.
Recommended Bias Resistor Values
for Icc= 62 mA, Rbias= (Vs - Vcc) / Icc
Supply Voltage (Vs)
5V
6V
8V
R
BIAS
V
ALUE
18 Ω
35 Ω
67 Ω
R
BIAS
P
OWER
R
ATING
1/8 W
1/4 W
1/2 W
HMC478ST89
/
478ST89E
SiGe HBT GAIN BLOCK
MMIC AMPLIFIER, DC - 4.0 GHz
v02.1205
Pin Number
Function
Description
Interface Schematic
1
RFIN
This pin is DC coupled.
An off chip DC blocking capacitor is required.
3
RFOUT
RF output and DC Bias (Vcc) for the output stage.
2, 4
GND
These pins and package bottom must be connected to
RF/DC ground.
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