参数资料
型号: HMC491LP3E
厂商: HITTITE MICROWAVE CORP
元件分类: 放大器
英文描述: 3400 MHz - 3800 MHz RF/MICROWAVE NARROW BAND LOW POWER AMPLIFIER
封装: 3 X 3 MM, 1 MM HEIGHT, ROHS COMPLIANT, LEADLESS, PLASTIC, SMT, QFN-16
文件页数: 4/6页
文件大小: 226K
代理商: HMC491LP3E
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
LO
W
NO
IS
E
A
M
PL
IF
IE
R
S
-SM
T
8
8 - 129
Bypass Mode
Input Return Loss vs. Temperature
Bypass Mode
Output Return Loss vs. Temperature
Bypass Mode
Input IP3 vs. Temperature
Bypass Mode
Input P1dB vs. Temperature
0
4
8
12
16
20
3.4
3.5
3.6
3.7
3.8
+25 C
+85 C
-40 C
IP3
(dBm)
FREQUENCY (GHz)
20
22
24
26
28
30
3.4
3.5
3.6
3.7
3.8
+25 C
+85 C
-40 C
INPUT
P1dB
(dBm)
FREQUENCY (GHz)
-25
-20
-15
-10
-5
0
3.4
3.5
3.6
3.7
3.8
+25 C
+85 C
-40 C
RETURN
LOSS
(dB)
FREQUENCY (GHz)
-15
-12
-9
-6
-3
0
3.4
3.5
3.6
3.7
3.8
+25 C
+85 C
-40 C
RETURN
LOSS
(dB)
FREQUENCY (GHz)
HMC491LP3 / 491LP3E
GaAs MMIC LOW NOISE AMPLIFIER
w/ BYPASS MODE, 3.4 - 3.8 GHz
v03.1206
Typical Supply Current vs. Vdd
Vdd (Vdc)
Idd (mA)
+2.7
7.6
+3.0
9.0
+3.3
10.2
Drain Bias Voltage (Vdd)
+7.0 Vdc
RF Input Power (RFIN)
(Vdd = +3.0 Vdc)
LNA Mode
Bypass Mode
0 dBm
+30 dBm
Channel Temperature
150 °C
Continuous Pdiss (T = 85 °C)
(derate 1.8 mW/°C above 85 °C)
0.117 W
Thermal Resistance
(channel to ground paddle)
556 °C/W
Storage Temperature
-65 to +150 °C
Operating Temperature
-40 to +85 °C
Absolute Maximum Ratings
LNA Mode
Vctl= Vdd @ 1.6 mA
Bypass Mode
Vctl= 0Vdc @ -13 A
Vdd= +3V ±10%
Truth Table
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
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