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参数资料
| 型号： | HMC498 |
| 厂商： | HITTITE MICROWAVE CORP |
| 元件分类： | 放大器 |
| 英文描述： | 17000 MHz - 24000 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER |
| 封装： | 2.38 X 1.46 MM, 0.10 MM HEIGHT, DIE-6 |
| 文件页数： | 4/6页 |
| 文件大小： | 253K |
| 代理商： | HMC498 |
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For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
Outline Drawing
Absolute Maximum Ratings
Drain Bias Voltage (Vdd1, Vdd2, Vdd3)
+5.5V
Gate Bias Voltage (Vgg)
-4 to 0V
RF Input Power (RFIN)(Vdd = +5V)
+10 dBm
Channel Temperature
175 °C
Continuous Pdiss (T= 85 °C)
(derate 29 mW/°C above 85 °C)
2.65 W
Thermal Resistance
(channel to die bottom)
34 °C/W
Storage Temperature
-65 to +150 °C
Operating Temperature
-55 to +85 °C
ESD Sensitivity (HBM)
Class 1A
Vdd (V)
Idd (mA)
+4.5
241
+5.0
250
+5.5
258
+3.0
240
+3.5
250
+4.0
259
Typical Supply Current vs. Vdd
Note: Amplifier will operate over full voltage ranges shown above.
Vgg adjusted to achieve Idd= 250mA at +5V and +3.5V.
NOTES:
1. ALL DIMENSIONS ARE IN INCHES [MM]
2. DIE THICKNESS IS .004”
3. TYPICAL BOND IS .004” SQUARE
4. BACKSIDE METALLIZATION: GOLD
5. BOND PAD METALLIZATION: GOLD
6. BACKSIDE METAL IS GROUND.
7. CONNECTION NOT REQUIRED FOR UNLABELED BOND PADS.
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
Die Packaging Information [1]
Standard
Alternate
GP-2 (Gel Pack)
[2]
[1] Refer to the “Packaging Information” section for die
packaging dimensions.
[2] For alternate packaging information contact Hittite
Microwave Corporation.
HMC498
v02.0110
GaAs pHEMT MMIC
POWER AMPLIFIER, 17 - 24 GHz
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| HMC498_10 | 制造商:HITTITE 制造商全称:Hittite Microwave Corporation 功能描述:GaAs pHEMT MMIC POWER AMPLIFIER, 17 - 24 GHz |
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| HMC498LC4TR | 功能描述:IC MODULATOR SIGE DIRECT 24-QFN 制造商:analog devices inc. 系列:- 包装:剪切带（CT） 零件状态:在售 功能:放大器 LO 频率:17GHz ~ 24GHz RF 频率:17GHz ~ 24GHz P1dB:25.5dBm 输出功率:- 电流 - 电源:250mA 电压 - 电源:5V 测试频率:- 封装/外壳:24-TFQFN 裸露焊盘 标准包装:1 |
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