参数资料
型号: HMC499
厂商: 美国讯泰微波有限公司上海代表处
英文描述: GaAs PHEMT MMIC MEDIUM POWER AMPLIFIER, 21 - 32 GHz
中文描述: GaAs PHEMT MMIC中功率放大器,21 - 32千兆赫
文件页数: 1/8页
文件大小: 217K
代理商: HMC499
MICROWAVE CORPORATION
1 - 120
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com
A
1
HMC499
GaAs PHEMT MMIC MEDIUM
POWER AMPLIFIER, 21 - 32 GHz
v00.0903
General Description
Features
Functional Diagram
The HMC499 is a high dynamic range GaAs
PHEMT MMIC Medium Power Amplifier which
operates between 21 and 32 GHz. The HMC499
provides 16 dB of gain, and an output power of
+24 dBm at 1 dB compression from a +5.0 V
supply voltage. The HMC499 amplifier can easily
be integrated into Multi-Chip-Modules (MCMs)
due to its small size. All data is with the chip in
a 50 Ohm test fixture connected via 0.025mm
(1 mil) diameter wire bonds of minimal length
0.31mm (12 mils).
+33 dBm Output IP3
+24 dBm P1dB
Gain: 16 dB
Supply Voltage: +5.0 V
50 Ohm Matched Input/Output
2.11 mm x 1.46 mm x 0.1 mm
Electrical Specifications,
T
A
= +25° C, Vdd = 5V, Idd = 200 mA*
Typical Applications
The HMC499 is ideal for use as a power
amplifier for:
Point-to-Point Radios
Point-to-Multi-Point Radios
VSAT
Military & Space
Parameter
Min.
Typ.
Max.
Min.
Typ.
Max.
Min.
Typ.
Max.
Units
Frequency Range
21.0 - 24.0
24.0 - 28.0
28.0 - 32.0
GHz
Gain
13
16
12.5
15.5
12
15
dB
Gain Variation Over Temperature
0.03
0.04
0.03
0.04
0.03
0.04
dB/ °C
Input Return Loss
10
5
8
dB
Output Return Loss
13
12
12
dB
Output Power for 1 dB Compression (P1dB)
20
23
20
24
21
24.5
dBm
Saturated Output Power (Psat)
24
24.5
25
dBm
Output Third Order Intercept (IP3)
30
33
33.5
dBm
Noise Figure
6.5
5.0
4.5
dB
Supply Current (Idd)(Vdd = 5V, Vgg = -0.8V Typ.)
200
200
200
mA
* Adjust Vgg between -2 to 0V to achieve Idd = 200 mA typical.
相关PDF资料
PDF描述
HMC500LP3 GaAs HBT VECTOR MODULATOR 1.8 - 2.2 GHz
HMC500LP3E GaAs HBT VECTOR MODULATOR 1.8 - 2.2 GHz
HMC505LP4 MMIC VCO wl BUFFER AMPLIFIER, 6.8 - 7.4 GHz
HMC505LP4E MMIC VCO wl BUFFER AMPLIFIER, 6.8 - 7.4 GHz
HMC506LP4 MMIC VCO w/ BUFFER AMPLIFIER, 7.8 - 8.7 GHz
相关代理商/技术参数
参数描述
HMC499_09 制造商:HITTITE 制造商全称:Hittite Microwave Corporation 功能描述:GaAs PHEMT MMIC MEDIUM POWER AMPLIFIER, 21 - 32 GHz
HMC499LC4 制造商:HITTITE 制造商全称:Hittite Microwave Corporation 功能描述:ACTIVE BIAS CONTROLLER
HMC499LC4_09 制造商:HITTITE 制造商全称:Hittite Microwave Corporation 功能描述:SMT PHEMT MEDIUM POWER AMPLIFIER, 21 - 32 GHz
HMC499LC4TR 制造商:Hittite Microwave Corp 功能描述:IC MMIC AMP MED PWR 24SMD
HMC49DRAH 功能描述:CONN EDGECARD 98POS R/A .100 SLD RoHS:是 类别:连接器,互连式 >> Card Edge 系列:- 标准包装:1 系列:- 卡类型:非指定 - 双边 类型:母头 Number of Positions/Bay/Row:50 位置数:100 卡厚度:0.062"(1.57mm) 行数:2 间距:0.100"(2.54mm) 特点:- 安装类型:通孔 端子:焊接 触点材料:铜铍 触点表面涂层:金 触点涂层厚度:30µin(0.76µm) 触点类型::全波纹管 颜色:绿 包装:管件 法兰特点:顶部安装开口,无螺纹,0.125"(3.18mm)直径 材料 - 绝缘体:聚苯硫醚(PPS) 工作温度:-65°C ~ 150°C 读数:双