- 您现在的位置：买卖IC网 > PDF目录65469 > HMC499 (HITTITE MICROWAVE CORP) 21000 MHz - 32000 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER PDF资料下载
参数资料
| 型号： | HMC499 |
| 厂商： | HITTITE MICROWAVE CORP |
| 元件分类： | 放大器 |
| 英文描述： | 21000 MHz - 32000 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER |
| 封装： | 2.04 X 1.09 MM, 0.10 MM HEIGHT, DIE-6 |
| 文件页数： | 1/6页 |
| 文件大小： | 257K |
| 代理商： | HMC499 |
L
IN
E
A
R
&
P
O
W
E
R
A
M
P
L
IF
IE
R
S
-
C
H
IP
3
3 - 56
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
HMC499
GaAs PHEMT MMIC MEDIUM
POWER AMPLIFIER, 21 - 32 GHz
v03.0908
General Description
Features
Functional Diagram
The HMC499 is a high dynamic range GaAs PHEMT
MMIC Medium Power Amplifier which operates
between 21 and 32 GHz. The HMC499 provides
16 dB of gain, and an output power of +24 dBm at
1 dB compression from a +5V supply voltage. The
HMC499 amplifier can easily be integrated into Multi-
Chip-Modules (MCMs) due to its small size. All data
is with the chip in a 50 Ohm test fixture connected
via 0.025mm (1 mil) diameter wire bonds of minimal
length 0.31mm (12 mils).
Output IP3: +33 dBm
P1dB: +24 dBm
Gain: 16 dB
Supply Voltage: +5V
50 Ohm Matched Input/Output
Die Size: 2.04 x 1.09 x 0.1 mm
Electrical Specifications, T
A = +25° C, Vdd = 5V, Idd = 200 mA*
Typical Applications
The HMC499 is ideal for use as a power amplifier for:
Point-to-Point Radios
Point-to-Multi-Point Radios
VSAT
Military & Space
Parameter
Min.
Typ.
Max.
Min.
Typ.
Max.
Min.
Typ.
Max.
Units
Frequency Range
21.0 - 24.0
24.0 - 28.0
28.0 - 32.0
GHz
Gain
13
16
12.5
15.5
12
15
dB
Gain Variation Over Temperature
0.03
0.04
0.03
0.04
0.03
0.04
dB/ °C
Input Return Loss
10
5
8
dB
Output Return Loss
13
12
dB
Output Power for 1 dB Compression (P1dB)
20
23
20
24
21
24.5
dBm
Saturated Output Power (Psat)
24
24.5
25
dBm
Output Third Order Intercept (IP3)
30
33
33.5
dBm
Noise Figure
6.5
5.0
4.5
dB
Supply Current (Idd)(Vdd = 5V, Vgg = -0.8V Typ.)
200
mA
* Adjust Vgg between -2 to 0V to achieve Idd = 200 mA typical.
相关PDF资料 |
PDF描述 |
|---|---|
| HMC516LC5 | 9000 MHz - 18000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER |
| HMC520 | 6000 MHz - 10000 MHz RF/MICROWAVE IMAGE REJECTION MIXER, 10 dB CONVERSION LOSS-MAX |
| HMC521 | 8500 MHz - 13500 MHz RF/MICROWAVE IMAGE REJECTION MIXER, 10 dB CONVERSION LOSS-MAX |
| HMC522LC4 | 11000 MHz - 16000 MHz RF/MICROWAVE IMAGE REJECTION MIXER, 10 dB CONVERSION LOSS-MAX |
| HMC527LC4 | 8500 MHz - 13500 MHz RF/MICROWAVE IMAGE REJECTION MIXER, 10 dB CONVERSION LOSS-MAX |
相关代理商/技术参数 |
参数描述 |
|---|---|
| HMC499_09 | 制造商:HITTITE 制造商全称:Hittite Microwave Corporation 功能描述:GaAs PHEMT MMIC MEDIUM POWER AMPLIFIER, 21 - 32 GHz |
| HMC499LC4 | 制造商:HITTITE 制造商全称:Hittite Microwave Corporation 功能描述:ACTIVE BIAS CONTROLLER |
| HMC499LC4_09 | 制造商:HITTITE 制造商全称:Hittite Microwave Corporation 功能描述:SMT PHEMT MEDIUM POWER AMPLIFIER, 21 - 32 GHz |
| HMC499LC4TR | 制造商:Hittite Microwave Corp 功能描述:IC MMIC AMP MED PWR 24SMD |
| HMC49DRAH | 功能描述:CONN EDGECARD 98POS R/A .100 SLD RoHS:是 类别:连接器，互连式 >> Card Edge 系列:- 标准包装:1 系列:- 卡类型:非指定 - 双边 类型:母头 Number of Positions/Bay/Row:50 位置数:100 卡厚度:0.062"（1.57mm） 行数:2 间距:0.100"（2.54mm） 特点:- 安装类型:通孔 端子:焊接 触点材料:铜铍 触点表面涂层:金 触点涂层厚度:30µin（0.76µm） 触点类型：:全波纹管 颜色:绿 包装:管件 法兰特点:顶部安装开口，无螺纹，0.125"（3.18mm）直径 材料 - 绝缘体:聚苯硫醚（PPS） 工作温度:-65°C ~ 150°C 读数:双 |
发布紧急采购，3分钟左右您将得到回复。