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参数资料
| 型号： | HMC504LC4B |
| 厂商： | HITTITE MICROWAVE CORP |
| 元件分类： | 放大器 |
| 英文描述： | 14000 MHz - 27000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER |
| 封装： | 4 X 4 MM, ROHS COMPLIANT, LEADLESS, CERAMIC, SMT, 24 PIN |
| 文件页数： | 4/6页 |
| 文件大小： | 608K |
| 代理商： | HMC504LC4B |
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
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7
7 - 4
Outline Drawing
Absolute Maximum Ratings
eleCTrosTATiC seNsiTiVe DeViCe
oBserVe HANDliNG preCAUTioNs
Drain Bias Voltage
+4.5V
rf input power
+6 dBm
Gate Bias Voltage
-1 to 0.3V
Channel Temperature
180 °C
Continuous pdiss (T = 85 °C)
(derate 20 mw/°C above 85 °C)
1.9 w
Thermal resistance
(Channel to die bottom)
50 °C/w
storage Temperature
-65 to +150 °C
operating Temperature
-55 to +85 °C
HMC504LC4B
v00.1108
GaAs HEMT MMIC LOW NOISE
AMPLIFIER, 14 - 27 GHz
NoTes:
1. pACKAGe BoDY mATeriAl: AlUmiNA.
2. leAD AND GroUND pADDle plATiNG: GolD flAsH oVer NiCKel.
3. DimeNsioNs Are iN iNCHes (millimeTers).
4. leAD spACiNG TolerANCe is NoN-CUmUlATiVe.
5. pACKAGe wArp sHAll NoT eXCeeD 0.05mm DATUm – C –
6. All GroUND leADs AND GroUND pADDle mUsT Be solDereD To pCB rf GroUND.
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