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参数资料
| 型号： | HMC580ST89 |
| 厂商： | HITTITE MICROWAVE CORP |
| 元件分类： | 放大器 |
| 英文描述： | 0 MHz - 1000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER |
| 封装： | PLASTIC, SOT-89, SMT, 3 PIN |
| 文件页数： | 4/6页 |
| 文件大小： | 203K |
| 代理商： | HMC580ST89 |
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
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8 - 149
Outline Drawing
Absolute Maximum Ratings
Collector Bias Voltage (Vcc)
+5.5 Vdc
RF Input Power (RFIN)(Vcc = +4.2 Vdc)
+10 dBm
Junction Temperature
150 °C
Continuous Pdiss (T = 85 °C)
(derate 9 mW/°C above 85 °C)
0.59 W
Thermal Resistance
(junction to lead)
110 °C/W
Storage Temperature
-65 to +150 °C
Operating Temperature
-40 to +85 °C
ESD Sensitivity (HMB)
Class 1C
Part Number
Package Body Material
Lead Finish
MSL Rating
Package Marking
[3]
HMC580ST89
Low Stress Injection Molded Plastic
Sn/Pb Solder
MSL1
[1]
H580
XXXX
HMC580ST89E
RoHS-compliant Low Stress Injection Molded Plastic
100% matte Sn
MSL1
[2]
H580
XXXX
[1] Max peak reflow temperature of 235 °C
[2] Max peak reflow temperature of 260 °C
[3] 4-Digit lot number XXXX
Package Information
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
HMC580ST89 / 580ST89E
v04.0710
InGaP HBT GAIN BLOCK
MMIC AMPLIFIER, DC - 1 GHz
NOTES:
1. PACKAGE BODY MATERIAL:
MOLDING COMPOUND MP-180S OR EQUIVALENT.
2. LEAD MATERIAL: Cu w/ Ag SPOT PLATING.
3. LEAD PLATING: 100% MATTE TIN.
4. DIMENSIONS ARE IN INCHES [MILLIMETERS]
5. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.15mm PER SIDE.
6. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.25mm PER SIDE.
7. ALL GROUND LEADS MUST BE SOLDERED TO PCB RF GROUND.
相关PDF资料 |
PDF描述 |
|---|---|
| HMC580ST89ETR | 0 MHz - 1000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER |
| HMC581LP6E | RF/MICROWAVE DOWN CONVERTER |
| HMC581LP6 | RF/MICROWAVE DOWN CONVERTER |
| HMC585MS8GE | 300 MHz - 750 MHz RF/MICROWAVE SINGLE BALANCED MIXER, 11 dB CONVERSION LOSS-MAX |
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相关代理商/技术参数 |
参数描述 |
|---|---|
| HMC580ST89_10 | 制造商:HITTITE 制造商全称:Hittite Microwave Corporation 功能描述:InGaP HBT GAIN BLOCK MMIC AMPLIFIER, DC - 1 GHz |
| HMC580ST89E | 功能描述:IC GAIN BLOCK AMP SOT89 RoHS:是 类别:RF/IF 和 RFID >> RF 放大器 系列:- 标准包装:3,000 系列:- 频率:100MHz ~ 6GHz P1dB:9.14dBm（8.2mW） 增益:15.7dB 噪音数据:1.3dB RF 型:CDMA，TDMA，PCS 电源电压:2.7 V ~ 5 V 电流 - 电源:60mA 测试频率:2GHz 封装/外壳:0505（1412 公制） 包装:带卷 (TR) |
| HMC580ST89ETR | 制造商:Hittite Microwave Corp 功能描述:IC GAIN BLOCK AMP SOT89 制造商:Hittite Microwave Corp 功能描述:HMC580 Series DC - 1 GHz InGaP HBT Gain Block MMIC Amplifier - SOT-89 制造商:Hittite Microwave Corp 功能描述:NA ONLY -HMC580 Series DC - 1 GHz InGaP HBT Gain Block MMIC Amplifier - SOT-89 |
| HMC581LP6 | 制造商:HITTITE 制造商全称:Hittite Microwave Corporation 功能描述:HIGH IP3 RFIC DUAL DOWNCONVERTER, 800 - 960 MHz |
| HMC581LP6_09 | 制造商:HITTITE 制造商全称:Hittite Microwave Corporation 功能描述:HIGH IP3 RFIC DUAL DOWNCONVERTER, 800 - 960 MHz |
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