参数资料
型号: HMC590LP5
厂商: HITTITE MICROWAVE CORP
元件分类: 放大器
英文描述: 6000 MHz - 9500 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER
封装: LEADLESS, PLASTIC, SMT, QFN-32
文件页数: 4/8页
文件大小: 274K
代理商: HMC590LP5
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
LI
N
E
A
R
&
P
O
W
ER
A
M
PL
IF
IE
R
S
-SM
T
11
11 - 297
v01.0107
Reverse Isolation
vs. Temperature, 7V @ 820 mA
Power Dissipation
-80
-70
-60
-50
-40
-30
-20
-10
0
6
6.5
7
7.5
8
8.5
9
9.5
10
+25C
+85C
-40C
ISOLATION
(dB)
FREQUENCY (GHz)
Gain & Power vs. Supply Current @ 8 GHz
Gain & Power vs. Supply Voltage @ 8 GHz
18
20
22
24
26
28
30
32
34
6.5
7
7.5
Gain
P1dB
Psat
GAIN
(dB),
P1dB
(dBm),
Psat(dBm)
Vdd SUPPLY VOLTAGE (Vdc)
16
20
24
28
32
36
940
1140
1340
Gain
P1dB
Psat
GAIN
(dB),
P1dB
(dBm),
Psat(dBm)
Idd SUPPLY CURRENT (mA)
3
3.5
4
4.5
5
5.5
6
-14
-10
-6
-2
2
6
10
14
6 GHz
7 GHz
8 GHz
9 GHz
10 GHz
POWER
DISSIPATION
(W)
INPUT POWER (dBm)
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
GaAs PHEMT MMIC 1 WATT
POWER AMPLIFIER, 6.0 - 9.5 GHz
Absolute Maximum Ratings
Drain Bias Voltage (Vdd)
+8 Vdc
Gate Bias Voltage (Vgg)
-2.0 to 0 Vdc
RF Input Power (RFIN)(Vdd = +7.0 Vdc) +12 dBm
Channel Temperature
175 °C
Continuous Pdiss (T= 75 °C)
(derate 59.8 mW/°C above 75 °C)
5.98 W
Thermal Resistance
(channel to package bottom)
16.72 °C/W
Storage Temperature
-65 to +150 °C
Operating Temperature
-55 to +85 °C
Vdd (V)
Idd (mA)
+6.5
824
+7.0
820
+7.5
815
Typical Supply Current vs. Vdd
Note: Amplifier will operate over full voltage ranges shown
above Vgg adjusted to achieve Idd = 820 mA at +7.0V
HMC590LP5 / 590LP5E
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