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参数资料
| 型号： | HMC617LP3 |
| 厂商： | HITTITE MICROWAVE CORP |
| 元件分类： | 放大器 |
| 英文描述： | 550 MHz - 1200 MHz RF/MICROWAVE NARROW BAND LOW POWER AMPLIFIER |
| 封装： | 3 X 3 MM, PLASTIC, SMT, QFN-16 |
| 文件页数： | 5/8页 |
| 文件大小： | 726K |
| 代理商： | HMC617LP3 |
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
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7 - 5
HMC617LP3 / 617LP3E
v02.0610
GaAs SMT PHEMT LOW NOISE
AMPLIFIER, 0.55 - 1.2 GHz
Output IP3 vs. Rbias @ 900 MHz
22
24
26
28
30
32
34
36
38
40
1000
10000
Vdd=3V
Vdd=5V
IP3
(dBm
)
Rbias (Ohms)
500
12
13
14
15
16
17
0
0.2
0.4
0.6
0.8
1
1000
10000
Vdd=5V
Vdd=3V
G
A
IN
(d
B
)
N
O
IS
E
F
IG
U
R
E
(d
B
)
Rbias(Ohms)
500
Gain, Noise Figure & Rbias @ 900 MHz
Output IP3 vs. Rbias @ 700 MHz
22
24
26
28
30
32
34
36
38
40
1000
10000
Vdd=3V
Vdd=5V
IP3
(dBm
)
Rbias (Ohms)
500
13
14
15
16
17
18
19
0
0.2
0.4
0.6
0.8
1
1.2
1000
10000
Vdd=5V
Vdd=3V
GAIN
(dB)
NOISE
FIGURE
(dB)
Rbias(Ohms)
500
Gain, Noise Figure & Rbias @ 700 MHz
Vdd (V)
rbias
idd (mA)
min
max
recommended
3V
1K [1]
open Circuit
2.7k
24
3.92k
30
4.7k
33
10k
40
5V
0
open Circuit
820
65
2k
78
3.92k
88
10k
90
[1] with Vdd= 3V and rbias < 1K ohm may result in the part becoming conditionally stable which is not recommended.
Absolute Bias Resistor
Range & Recommended Bias Resistor Values for Idd
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相关代理商/技术参数 |
参数描述 |
|---|---|
| HMC617LP3E | 制造商:Hittite Microwave Corp 功能描述:IC MMIC AMP LNA ADJ IDS 16-QFN |
| HMC617LP3ETR | 制造商:Hittite Microwave Corp 功能描述:HMC617 Series 0.55 - 1.2 GHz GaAs SMT PHEMT Low Noise Amplifier - QFN-16 制造商:Hittite Microwave Corp 功能描述:NA ONLY -HMC617 Series 0.55 - 1.2 GHz GaAs SMT PHEMT Low Noise Amplifier -QFN-16 |
| HMC6187LP4E | 制造商:COOPER 制造商全称:Cooper Bussmann, Inc. 功能描述:VARIABLE GAIN AMPLIFIER |
| HMC618ALP3E | 功能描述:RF Amplifier IC LTE, WiMax 1.2GHz ~ 2.2GHz 16-SMT (3x3) 制造商:analog devices inc. 系列:- 包装:剪带 零件状态:有效 频率:1.2GHz ~ 2.2GHz P1dB:20dBm 增益:23dB 噪声系数:0.85dB RF 类型:LTE，WiMax 电压 - 电源:3 V ~ 5 V 电流 - 电源:118mA 测试频率:2.2GHz 封装/外壳:16-VFQFN 裸露焊盘 供应商器件封装:16-SMT（3x3） 标准包装:1 |
| HMC618ALP3ETR | 功能描述:RF Amplifier IC LTE, WiMax 1.2GHz ~ 2.2GHz 16-SMT (3x3) 制造商:analog devices inc. 系列:- 包装:剪切带（CT） 零件状态:有效 频率:1.2GHz ~ 2.2GHz P1dB:20dBm 增益:23dB 噪声系数:0.75dB RF 类型:LTE，WiMax 电压 - 电源:3 V ~ 5 V 电流 - 电源:89mA 测试频率:1.7GHz ~ 2GHz 封装/外壳:16-VFQFN 裸露焊盘 供应商器件封装:16-SMT（3x3） 标准包装:1 |
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