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参数资料
| 型号： | HMC618LP3E |
| 厂商： | HITTITE MICROWAVE CORP |
| 元件分类： | 放大器 |
| 英文描述： | 1200 MHz - 2200 MHz RF/MICROWAVE NARROW BAND LOW POWER AMPLIFIER |
| 封装： | 3 X 3 MM, ROHS COMPLIANT, PLASTIC, SMT, 16 PIN |
| 文件页数： | 2/14页 |
| 文件大小： | 996K |
| 代理商： | HMC618LP3E |
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
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7 - 10
HMC618LP3 / 618LP3E
v08.1210
GaAs SMT pHEMT LOW NOISE
AMPLIFIER, 1.2 - 2.2 GHz
Absolute Maximum Ratings
Drain Bias Voltage (Vdd1, Vdd2)
+6V
rf input power (rfiN)
(Vdd = +5 Vdc)
+10 dBm
Channel Temperature
150 °C
Continuous pdiss (T= 85 °C)
(derate 9.68 mw/°C above 85 °C)
0.63 w
Thermal resistance
(channel to ground paddle)
103.4 °C/w
storage Temperature
-65 to +150 °C
operating Temperature
-40 to +85 °C
Vdd (Vdc)
idd (mA)
2.7
35
3.0
47
3.3
58
4.5
72
5.0
89
5.5
106
Note: Amplifier will operate over full voltage ranges shown above.
Typical Supply Current vs. Vdd
R
bias = 10 KOhm for 3V
R
bias = 470 Ohm for 5V
eleCTrosTATiC seNsiTiVe DeViCe
oBserVe HANDliNG preCAUTioNs
Outline Drawing
Package Information
part Number
package Body material
lead finish
msl rating
package marking [3]
HmC618lp3
low stress injection molded plastic
sn/pb solder
msl1
[1]
618
XXXX
HmC618lp3e
roHs-compliant low stress injection molded plastic
100% matte sn
msl1
[2]
618
XXXX
[1] max peak reflow temperature of 235 °C
[2] max peak reflow temperature of 260 °C
[3] 4-Digit lot number XXXX
NoTes:
1. leADfrAme mATeriAl: Copper AlloY
2. DimeNsioNs Are iN iNCHes [millimeTers]
3. leAD spACiNG TolerANCe is NoN-CUmUlATiVe
4. pAD BUrr leNGTH sHAll Be 0.15mm mAXimUm.
pAD BUrr HeiGHT sHAll Be 0.05mm mAXimUm.
5. pACKAGe wArp sHAll NoT eXCeeD 0.05mm.
6. All GroUND leADs AND GroUND pADDle mUsT Be solDereD To pCB rf GroUND.
7. refer To HiTTiTe AppliCATioN NoTe for sUGGesTeD lAND pATTerN.
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相关代理商/技术参数 |
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| HMC618LP3ETR | 制造商:Hittite Microwave Corp 功能描述:HMC618 Series 1.2 - 2.2 GHz GaAs SMT pHEMT Low Noise Amplifier - QFN-16 |
| HMC619 | 制造商:HITTITE 制造商全称:Hittite Microwave Corporation 功能描述:GaAs PHEMT MMIC POWER AMPLIFIER, DC - 10 GHz |
| HMC619_09 | 制造商:HITTITE 制造商全称:Hittite Microwave Corporation 功能描述:GaAs PHEMT MMIC POWER AMPLIFIER, DC - 10 GHz |
| HMC619LP5 | 制造商:HITTITE 制造商全称:Hittite Microwave Corporation 功能描述:GaAs PHEMT MMIC POWER AMPLIFIER, DC - 10 GHz |
| HMC619LP5E | 制造商:Hittite Microwave Corp 功能描述:IC MMIC AMP PHEMT 0.5W 32-QFN |
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