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参数资料
| 型号： | HMC619LP5E |
| 厂商： | HITTITE MICROWAVE CORP |
| 元件分类： | 放大器 |
| 英文描述： | 0 MHz - 10000 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER |
| 封装： | 5 X 5 MM, ROHS COMPLIANT, PLASTIC, SMT, 32 PIN |
| 文件页数： | 1/8页 |
| 文件大小： | 273K |
| 代理商： | HMC619LP5E |
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For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
HMC619LP5 / 619LP5E
v07.0908
General Description
Features
Functional Diagram
Typical Applications
GaAs PHEMT MMIC
POWER AMPLIFIER, DC - 10 GHz
The HMC619LP5(E)
is a GaAs MMIC PHEMT
Distributed Power Amplifier die which operates bet-
ween DC and 10 GHz. The amplifier provides 11 dB
of gain, +37 dBm output IP3 and +27 dBm of output
power at 1 dB gain compression while requiring 300
mA from a +12V supply. Gain flatness is excellent at
±0.5 dB from DC - 10 GHz making the HMC619LP5(E)
ideal for EW, ECM, Radar and test equipment
applications. The HMC619LP5(E) amplifier I/Os are
internally matched to 50 ohms.
P1dB Output Power: +27 dBm
Gain: 11 dB
Output IP3: +37 dBm
Supply Voltage: +12V @ 300 mA
50 Ohm Matched Input/Output
32 Lead 5x5mm Lead SMT Package: 25mm2
The HMC619LP5(E) wideband PA is ideal for:
Telecom Infrastructure
Microwave Radio & VSAT
Military & Space
Test Instrumentation
Fiber Optics
Electrical Specifications, T
A = +25° C, Vdd= +12V, Vgg2= +5V, Idd= 300 mA*
Parameter
Min.
Typ.
Max.
Min.
Typ.
Max.
Min.
Typ.
Max.
Units
Frequency Range
DC - 2.0
2.0 - 8.0
8.0 - 10.0
GHz
Gain
10
12
9
11
8
10.5
dB
Gain Flatness
±0.5
±0.25
±0.5
dB
Gain Variation Over Temperature
0.016
0.02
0.03
dB/ °C
Input Return Loss
11
12.5
17
dB
Output Return Loss
16
12
dB
Output Power for 1 dB Compression (P1dB)
28
25
27
23
25
dBm
Saturated Output Power (Psat)
29
28
25.5
dBm
Output Third Order Intercept (IP3)
41
37
32
dBm
Noise Figure
5
7
dB
Supply Current
(Idd) (Vdd= +12V, Vgg1= -0.8V Typ.)
300
mA
* Adjust Vgg1 between -2 to 0V to achieve Idd= 300 mA typical.
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