参数资料
型号: HMC633
厂商: HITTITE MICROWAVE CORP
元件分类: 放大器
英文描述: 5000 MHz - 17000 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER
封装: 2.07 X 0.93 MM, 0.10 MM HEIGHT, DIE-7
文件页数: 1/8页
文件大小: 423K
代理商: HMC633
A
m
p
li
f
ie
r
s
-
d
r
iv
e
r
&
g
A
in
b
lo
c
k
-
c
h
ip
2
2 - 1
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
HMC633
GaAs PHEMT MMIC DRIVER
AMPLIFIER, 5 - 17 GHz
v00.1107
General Description
Features
Functional Diagram
The hmc633 is a gaAs mmic phemT driver
Amplifier die which operates between 5 and 17 ghz.
The amplifier provides up to 31 db of gain, +30 dbm
output ip3, and +23 dbm of output power at 1 db
gain compression, while requiring 180 mA from a +5v
supply. The hmc633 is an ideal driver amplifier for
microwave radio applications from 5 to 17 ghz, and
may also be biased at +5v, 130 mA to provide 2 db
lower gain with improved pAe. The hmc633 amplifier
i/o’s are dc blocked and internally matched to 50
ohms facilitating easy integration into multi-chip-
modules (mcms). All data is taken with die connected
at input and output rf ports via one 1 mil wedge bond
with minimal length of 0.31 mm (12 mils).
gain: 29 db
p1db: +23 dbm
output ip3: +30 dbm
saturated power: +24 dbm @ 27% pAe
supply voltage: +5v @ 180 mA
50 ohm matched input/output
die size: 2.07 x 0.93 x 0.1 mm
Electrical Specifications, T
A = +25° C, Vdd1, Vdd2, Vdd3, Vdd4 = 5V, Idd = 180 mA
[1]
Typical Applications
The hmc633 is ideal for:
Point-to-Point Radios
Point-to-Multi-Point Radios & VSAT
LO Driver for Mixers
Military & Space
parameter
min.
Typ.
max.
min.
Typ.
max.
Units
frequency range
5 - 9
9 - 17
ghz
gain
27
31
26
29
db
gain variation over Temperature
0.035
0.044
0.040
0.050
db/ °c
input return loss
14
16
db
output return loss
15
12
db
output power for 1 db compression (p1db)
21
23
21
23
dbm
saturated output power (psat)
24
23.5
dbm
output Third order intercept (ip3)
30
dbm
noise figure
9
7
db
supply current (idd= idd1 + idd2 + idd3 + idd4)
180
mA
[1] Adjust Vgg between -2 to 0V to achieve Idd = 180mA Typical
相关PDF资料
PDF描述
HMC634 5000 MHz - 20000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER
HMC640LP5 400 MHz - 3000 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER
HMC641LC4 0 MHz - 20000 MHz RF/MICROWAVE SGL POLE FOUR THROW SWITCH, 3.5 dB INSERTION LOSS
HMC641LP4E 0 MHz - 20000 MHz RF/MICROWAVE SGL POLE FOUR THROW SWITCH, 4.2 dB INSERTION LOSS
HMC642 9000 MHz - 12500 MHz, 0 deg - 360 deg RF/MICROWAVE DIGITALLY CONTROLLED PH SHFTR
相关代理商/技术参数
参数描述
HMC633_11 制造商:HITTITE 制造商全称:Hittite Microwave Corporation 功能描述:GaAs PHEMT MMIC DRIVER AMPLIFIER, 5 - 17 GHz
HMC633LC4 制造商:HITTITE 制造商全称:Hittite Microwave Corporation 功能描述:ACTIVE BIAS CONTROLLER
HMC633LC4TR 制造商:Hittite Microwave Corp 功能描述:IC MMIC DVR AMP GAAS 24SMD
HMC633-SX 功能描述:RF Amplifier IC General Purpose 5GHz ~ 17GHz Die 制造商:analog devices inc. 系列:- 包装:托盘 零件状态:有效 频率:5GHz ~ 17GHz P1dB:23dBm 增益:29dB 噪声系数:7dB RF 类型:通用 电压 - 电源:5V 电流 - 电源:180mA 测试频率:- 封装/外壳:模具 供应商器件封装:模具 标准包装:2
HMC634 制造商:HITTITE 制造商全称:Hittite Microwave Corporation 功能描述:ACTIVE BIAS CONTROLLER