参数资料
型号: HMC639ST89E
厂商: HITTITE MICROWAVE CORP
元件分类: 放大器
英文描述: 200 MHz - 4000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER
封装: ROHS COMPLIANT, PLASTIC, SOT-89, 3 PIN
文件页数: 1/6页
文件大小: 664K
代理商: HMC639ST89E
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
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HMC639ST89 / 639ST89E
HIGH IP3, LOW NOISE
AMPLIFIER, 0.2 - 4.0 GHz
v03.0810
General Description
Features
Functional Diagram
The HMC639ST89(E) is a GaAs pHEMT, High
Linearity, Low Noise, Wideband Gain Block Amplifier
covering 0.2 to 4.0 GHz. Packaged in an industry
standard SOT89, the amplifier can be used as either
a cascadable 50 Ohm gain stage, a PA Pre-Driver,
a Low Noise Amplifier, or a Gain Block with up to
+22 dBm output power. This versatile Gain Block
Amplifier is powered from a single +5V supply and
requires no external matching components. The
internally matched topology permits this amplifier to
be readily ported between virtually any printed circuit
board material, regardless of its dielectric constant,
thickness, or composition.
Low Noise Figure: 2.3 dB
High P1dB Output Power: +22 dBm
High Output IP3: +38 dBm
Gain: 13 dB
50 Ohm I/O’s - No External Matching
Industry Standard SOT89 Package
Typical Applications
The HMC639ST89(E) is ideal for:
Cellular / PCS / 3G
WiMAX, WiBro, & Fixed Wireless
CATV & Cable Modem
Microwave Radio
IF and RF Sections
Electrical Specifications, Vs= 5V, T
A = +25° C
Parameter
Min
Typ.
Max
Min.
Typ.
Max.
Units
Frequency Range
0.7 - 2.2
0.2 - 4.0
GHz
Gain
10
13
6
10
dB
Gain Variation Over Temperature
0.01
0.02
0.01
0.02
dB/ °C
Input Return Loss
12
dB
Output Return Loss
12
14
dB
Reverse Isolation
20
dBm
Output Power for 1 dB Compression (P1dB)
19
21
20
22
dB
Output Third Order Intercept (IP3)
35
38
35
38
dBm
Noise Figure
2.3
2.5
dB
Supply Current (Icq)
90
110
120
90
110
120
mA
Note: Data taken with broadband bias tee on device output.
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