参数资料
型号: HMC640LP5
厂商: HITTITE MICROWAVE CORP
元件分类: 放大器
英文描述: 400 MHz - 3000 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER
封装: 5 X 5 MM, LEADLESS, PLASTIC, SMT, QFN-32
文件页数: 7/10页
文件大小: 569K
代理商: HMC640LP5
8 - 49
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
V
A
R
IA
B
L
E
G
A
IN
A
M
P
L
IF
IE
R
S
-
SM
T
8
Absolute Maximum Ratings
Max. RF Input[1]
+20 dBm
Max. RF Input[2]
+10 dBm
Max Voltage
5.5 Vdc
Channel Temperature
150 °C
Continuous Pdiss (T = 85 °C)
(derate 24.12 mW/°C above 85 °C) [1]
1.57 W
Thermal Resistance (Channel to
Package Base)
41.45 °C/W
Storage Temperature
-65 to +150 °C
Operating Temperature
-40 to +85 °C
[1] At Vct1 = 5.0V
[2] At Vct1 = 0V
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
Bias Voltage
Vdd (Vdc)
Idd (Typ.) (mA)
+5V
265
HMC640LP5 / 640LP5E
v03.0408
GaAs MMIC ANALOG VARIABLE
GAIN AMPLIFIER, 0.4 - 3.0 GHz
Output IP3 vs. Control Voltage @ 900 MHz
Output IP3 vs. Control Voltage @ 1900
Output IP3 vs. Control Voltage @ 2400 MHz
0
5
10
15
20
25
30
35
40
45
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
5
+25C
+85C
-40C
IP3
(dBm)
CONTROL VOLTAGE (V)
0
5
10
15
20
25
30
35
40
45
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
5
+25C
+85C
-40C
IP3
(dBm)
CONTROL VOLTAGE (V)
0
5
10
15
20
25
30
35
40
45
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
5
+25C
+85C
-40C
IP3
(dBm)
CONTROL VOLTAGE (V)
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HMC641ALP4E 功能描述:RF Switch IC VSAT SP4T 20GHz 50 Ohm 24-SMT (4x4) 制造商:analog devices inc. 系列:- 包装:剪带 零件状态:有效 频率?- 下:0Hz 频率?- 上:20GHz 隔离 @ 频率:40dB @ 20GHz(标准) 插损 @ 频率:3dB @ 20GHz IIP3:41dBm(标准) 拓扑:吸收性 电路:SP4T P1dB:24dBm 特性:- 阻抗:50 欧姆 工作温度:-40°C ~ 85°C 电压 - 电源:- RF 类型:VSAT 封装/外壳:24-VFQFN 裸露焊盘 供应商器件封装:24-SMT(4x4) 标准包装:1