参数资料
型号: HMC667LP2
厂商: HITTITE MICROWAVE CORP
元件分类: 放大器
英文描述: 2300 MHz - 2700 MHz RF/MICROWAVE NARROW BAND LOW POWER AMPLIFIER
封装: 2 X 2 MM, PLASTIC, SMT, DFN-6
文件页数: 3/8页
文件大小: 299K
代理商: HMC667LP2
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
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M
P
L
IF
IE
R
S
-
L
O
W
NO
IS
E
-
SM
T
7
7 - 3
Psat vs. Temperature
HMC667LP2 / 667LP2E
v02.1110
GaAs PHEMT MMIC LOW NOISE
AMPLIFIER, 2.3 - 2.7 GHz
Output IP3 and Idd vs.
Supply Voltage @ 2300 MHz
[1] Measurement reference plane shown on evaluation PCB drawing.
Output IP3 vs. Temperature
Noise Figure vs. Temperature [1]
Output IP3 and Idd vs.
Supply Voltage @ 2500 MHz
16
18
20
22
24
26
28
30
32
34
36
16
22
28
34
40
46
52
58
64
70
76
2.7
3.1
3.5
3.9
4.3
4.7
5.1
5.5
IP3
(dB)
Idd
(mA)
Voltage Supply (V)
16
18
20
22
24
26
28
30
32
34
36
16
22
28
34
40
46
52
58
64
70
76
2.7
3.1
3.5
3.9
4.3
4.7
5.1
5.5
IP3
(dB)
Idd
(mA)
Voltage Supply (V)
16
18
20
22
24
26
28
30
32
34
36
2.2
2.3
2.4
2.5
2.6
2.7
2.8
2.9
3
+25C
+85C
-40C
FREQUENCY (GHz)
IP3
(dBm)
Vdd=5V
Vdd=3V
6
8
10
12
14
16
18
20
2
2.1
2.2
2.3
2.4
2.5
2.6
2.7
2.8
2.9
3
+25C
+85C
-40C
FREQUENCY (GHz)
Psat
(dBm)
Vdd=5V
Vdd=3V
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
2
2.1
2.2
2.3
2.4
2.5
2.6
2.7
2.8
2.9
3
Vdd=5V
Vdd=3V
FREQUENCY (GHz)
NOISE
FIGURE
(dB)
+85C
+25C
-40C
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相关代理商/技术参数
参数描述
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HMC667LP2ETR 制造商:Hittite Microwave Corp 功能描述:IC MMIC AMP LNA PHEMT 6-DFN
HMC668LP3 制造商:HITTITE 制造商全称:Hittite Microwave Corporation 功能描述:GaAs PHEMT MMIC LNA w/ FAILSAFE BYPASS MODE, 700 - 1200 MHz
HMC668LP3E 制造商:Hittite Microwave Corp 功能描述:IC MMIC AMP LNA BYPASS 16-QFN
HMC669LP3 制造商:HITTITE 制造商全称:Hittite Microwave Corporation 功能描述:GaAs PHEMT MMIC LNA w/ FAILSAFE BYPASS MODE, 1700 - 2200 MHz