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参数资料
| 型号： | HMC717LP3 |
| 厂商： | HITTITE MICROWAVE CORP |
| 元件分类： | 放大器 |
| 英文描述： | 4800 MHz - 6000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER |
| 封装： | 3 X 3 MM, PLASTIC, SMT, QFN-16 |
| 文件页数： | 1/10页 |
| 文件大小： | 738K |
| 代理商： | HMC717LP3 |
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
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HMC717LP3 / 717LP3E
GaAs PHEMT MMIC LOW NOISE
AMPLIFIER, 4.8 - 6.0 GHz
v02.0809
General Description
Features
Functional Diagram
The HmC717lp3(e) is a GaAs pHemT mmiC
low Noise Amplifier that is ideal for fixed wireless
and lTe/wimAX/4G basestation front-end receivers
operating between 4.8 and 6.0 GHz. The amplifier
has been optimized to provide 1.1 dB noise figure,
16.5 dB gain and +31.5 dBm output ip3 from a single
supply of +5V. input and output return losses are
excellent and the lNA requires minimal external
matching and bias decoupling components. The
HmC717lp3(e) can be biased with +3V to +5V and
features an externally adjustable supply current
which allows the designer to tailor the linearity
performance of the lNA for each application.
Noise figure: 1.1 dB
Gain: 16.5 dB
output ip3: +31.5 dBm
single supply: +3V to +5V
16 lead 3x3mm QfN package: 9 mm2
Typical Applications
The HmC717lp3(e) is ideal for:
fixed wireless and lTe/wimAX/4G
BTs & infrastructure
repeaters and femtocells
public safety radio
Access points
Electrical Specifications
T
A = +25° C, Rbias = 2k Ohms for Vdd = 5V, Rbias = 20k Ohms for Vdd = 3V
[1] [2]
parameter
Vdd = +3V
Vdd = +5V
Units
min.
Typ.
max.
min.
Typ.
max.
frequency range
4.8 - 6.0
mHz
Gain
12
14.3
13.5
16.5
dB
Gain Variation over Temperature
0.01
dB/ °C
Noise figure
1.25
1.5
1.1
1.4
dB
input return loss
13
dB
output return loss
13
18
dB
output power for 1 dB Compression (p1dB)
12
14
15
18.5
dBm
saturated output power (psat)
15
19.5
dBm
output Third order intercept (ip3)
25.5
31.5
dBm
Total supply Current (idd)
31
40
73
100
mA
[1] rbias resistor sets current, see application circuit herein
[2] Vdd = Vdd1 = Vdd2
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相关代理商/技术参数 |
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|---|---|
| HMC717LP3E | 制造商:Hittite Microwave Corp 功能描述:RF AMP LOW NOISE 6GHZ 16QFN |
| HMC717LP3ETR | 制造商:Hittite Microwave Corp 功能描述:HMC717 Series 4.8 - 6.0 GHz MMIC Low Noise Amplifier SMT - 3x3 mm QFN-16 |
| HMC718LP4 | 制造商:HITTITE 制造商全称:Hittite Microwave Corporation 功能描述:GaAs PHEMT MMIC HIGH IP3 LOW NOISE AMPLIFIER, 0.6 - 1.4 GHz |
| HMC718LP4E | 制造商:Hittite Microwave Corp 功能描述:IC MMIC AMP LNA PHEMPT 24-QFN |
| HMC719LP4 | 制造商:HITTITE 制造商全称:Hittite Microwave Corporation 功能描述:GaAs PHEMT MMIC HIGH IP3 LOW NOISE AMPLIFIER, 1.3 - 2.9 GHz |
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