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参数资料
| 型号： | HMC740ST89E |
| 厂商： | HITTITE MICROWAVE CORP |
| 元件分类： | 放大器 |
| 英文描述： | 50 MHz - 3000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER |
| 封装： | ROHS COMPLIANT, PLASTIC, SOT-89, SMT, 3 PIN |
| 文件页数： | 1/8页 |
| 文件大小： | 917K |
| 代理商： | HMC740ST89E |
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
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HMC740ST89E
InGaP HBT ACTIVE BIAS
MMIC AMPLIFIER, 0.05 – 3 GHz
v01.0710
General Description
Functional Diagram
The Hmc740sT89e is an inGap Heterojunction
Bipolar Transistor (HBT) Gain Block mmic smT
amplifier covering 0.05 to 3 GHz. packaged in an
industry standard soT89, the amplifier can be used
as a cascadable 50 ohm rf or if gain stage as
well as a pA or lo driver with up to +18 dBm output
power. The Hmc740sT89e offers 15 dB of gain with
a +40 dBm output ip3 at 100 mHz, and can operate
directly from a +5v supply. The Hmc740sT89e
exhibits excellent gain and output power stability over
temperature, while requiring a minimal number of
external bias components.
p1dB output power: +18 dBm
Gain: 15 dB
output ip3: +40 dBm
cascadable 50 ohm i/os
single supply: +5v
industry standard soT89 package
robust 1000v esD, class 1c
stable current over Temperature
Active Bias network
Typical Applications
The Hmc740sT89e is ideal for:
cellular/3G & WimAX/4G
fixed Wireless & WlAn
cATv, cable modem & DBs
microwave radio & Test equipment
if & rf Applications
Electrical Specifications, Vcc = 5V, T
A = +25° C
parameter
min.
Typ.
max.
min.
Typ.
max.
Units
frequency range
0.05 - 1
0.05 - 3
GHz
Gain
12
15
11
15
dB
Gain flatness
±0.1
±0.7
dB
Gain variation over Temperature
0.003
0.006
0.003
0.006
dB/ °c
input return loss
18
15
dB
output return loss
18
dB
reverse isolation
20
21
dB
output power for 1 dB compression (p1dB)
15.5
18
14.5
17
dBm
output Third order intercept (ip3)
(pout= 0 dBm per tone, 1 mHz spacing)
38
32
dBm
noise figure
3.5
dB
supply current (icq)
88
mA
Features
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相关代理商/技术参数 |
参数描述 |
|---|---|
| HMC740ST89E_10 | 制造商:HITTITE 制造商全称:Hittite Microwave Corporation 功能描述:InGaP HBT ACTIVE BIAS MMIC AMPLIFIER, 0.05 – 3 GHz |
| HMC740ST89ETR | 功能描述:RF Amplifier IC General Purpose 50MHz ~ 3GHz SOT-89 制造商:analog devices inc. 系列:- 包装:剪切带（CT） 零件状态:有效 频率:50MHz ~ 3GHz P1dB:18dBm 增益:15dB 噪声系数:3.5dB RF 类型:通用 电压 - 电源:5V 电流 - 电源:88mA 测试频率:- 封装/外壳:TO-243AA 供应商器件封装:SOT-89 标准包装:1 |
| HMC741ST89_09 | 制造商:HITTITE 制造商全称:Hittite Microwave Corporation 功能描述:InGaP HBT ACTIVE BIAS MMIC AMPLIFIER, 0.05 - 3 GHz |
| HMC741ST89E | 功能描述:IC GAIN BLOCK AMP SOT89 RoHS:是 类别:RF/IF 和 RFID >> RF 放大器 系列:- 标准包装:3,000 系列:- 频率:100MHz ~ 6GHz P1dB:9.14dBm（8.2mW） 增益:15.7dB 噪音数据:1.3dB RF 型:CDMA，TDMA，PCS 电源电压:2.7 V ~ 5 V 电流 - 电源:60mA 测试频率:2GHz 封装/外壳:0505（1412 公制） 包装:带卷 (TR) |
| HMC741ST89E_10 | 制造商:HITTITE 制造商全称:Hittite Microwave Corporation 功能描述:InGaP HBT ACTIVE BIAS MMIC AMPLIFIER, 0.05 a?? 3 GHz |
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