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参数资料
| 型号： | HMC801LP3E |
| 厂商： | HITTITE MICROWAVE CORP |
| 元件分类： | 衰减器 |
| 英文描述： | 0 MHz - 10000 MHz RF/MICROWAVE VARIABLE ATTENUATOR, 3.5 dB INSERTION LOSS-MAX |
| 封装： | 3 X 3 MM, ROHS COMPLIANT, LEADLESS, PLASTIC, SMT-16 |
| 文件页数： | 1/6页 |
| 文件大小： | 368K |
| 代理商： | HMC801LP3E |
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
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HMC801LP3E
15 dB GaAs MMIC 1-BIT DIGITAL
POSITIVE CONTROL ATTENUATOR, DC - 10 GHz
v01.0610
Functional Diagram
Electrical Specifications, T
A = +25° C, With Vdd = +5V & Vctl = 0/+5V
the HMC801LP3e is ideal for both rF
and IF applications:
test equipment and sensors
IsM, MMDs, WLAn, WiMAX, WiBro
Microwave radio & VsAt
Cellular Infrastructure
± 0.4 dB typical step error
Low Insertion Loss: 2 dB
High IP3: +53 dBm
single Control Line
ttL/CMos Compatible Control
single +5V supply
16 Lead 3x3 mm sMt Package: 9 mm
the HMC801LP3e is a broadband bidirectional 1-bit
GaAs IC digital attenuator in a low cost leadless sur-
face mount package. this single positive control line
digital attenuator utilizes off chip AC ground capaci-
tors for near DC operation, making it suitable for a
wide variety of rF and IF applications. Covering DC
to 10 GHz, the insertion loss is less than 2 dB typical
and attenuation accuracy is excellent at ±0.4 dB typi-
cal step error. the attenuator also features a high IIP3
of +53 dBm. one ttL/CMos control input is used to
select the attenuation state and a single Vdd bias of
+5V is required.
Parameter
Frequency (GHz)
Min.
typ.
Max.
units
Insertion Loss
DC - 4 GHz
4 - 8 GHz
8 - 10 GHz
1.0
2.0
2.5
2.0
3.0
3.5
dB
Attenuation range
DC - 10 GHz
15
dB
return Loss (rF1 & rF2, Both states)
DC - 6 GHz
6 - 10 GHz
18
14
dB
Attenuation Accuracy: (referenced to Insertion Loss)
DC - 8 GHz
8 - 10 GHz
± 0.4
± 0.5
± 0.6
± 0.7
dB
Input Power for 0.1 dB Compression
DC - 0.4 GHz
0.4 - 10 GHz
20
30*
dBm
Input third order Intercept Point
(two-tone Input Power= 0 dBm each tone)
DC - 0.4 GHz
0.4 - 10 GHz
43
53
dBm
switching Characteristics
trIse, tFALL (10/90% rF)
ton, toFF (50% CtL to 10/90% rF)
DC - 10 GHz
120
150
ns
Typical Applications
Features
General Description
* For frequencies greater than 0.4 GHz, the 0.1 dB compression point is greater than the absolute maximum rF input power of 30 dBm.
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相关代理商/技术参数 |
参数描述 |
|---|---|
| HMC801LP3ETR | 功能描述:RF Attenuator 15dB ±0.5dB 0 ~ 10GHz 50 Ohm 16-VFQFN Exposed Pad 制造商:analog devices inc. 系列:- 零件状态:过期 衰减值:15dB 容差:±0.5dB 频率范围:0 ~ 10GHz 功率（W）:- 阻抗:50 欧姆 封装/外壳:16-VFQFN 裸露焊盘 标准包装:1 |
| HMC802ALP3E | 功能描述:RF Attenuator 20dB ±0.2dB 0 ~ 1GHz 16-VQFN Exposed Pad 制造商:analog devices inc. 系列:- 零件状态:有效 衰减值:20dB 容差:±0.2dB 频率范围:0 ~ 1GHz 功率（W）:- 阻抗:- 封装/外壳:16-VQFN 裸露焊盘 标准包装:1 |
| HMC802ALP3ETR | 功能描述:IC ATTENUATOR 20DB 16LFSP 制造商:analog devices inc. 系列:- 零件状态:在售 衰减值:20dB 频率范围:0Hz ~ 1GHz 功率（W）:- 封装/外壳:16-VFQFN 裸露焊盘 标准包装:1 |
| HMC802LP3E | 制造商:Hittite Microwave Corp 功能描述:IC ATTENUATOR 1-BIT 20DB 16-QFN |
| HMC802LP3ETR | 功能描述:RF Attenuator 20dB ±0.8dB 0 ~ 10GHz 50 Ohm 16-VFQFN Exposed Pad 制造商:analog devices inc. 系列:- 零件状态:过期 衰减值:20dB 容差:±0.8dB 频率范围:0 ~ 10GHz 功率（W）:- 阻抗:50 欧姆 封装/外壳:16-VFQFN 裸露焊盘 标准包装:1 |
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