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参数资料
| 型号： | HMC907LP5E |
| 厂商： | HITTITE MICROWAVE CORP |
| 元件分类： | 放大器 |
| 英文描述： | 200 MHz - 22000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER |
| 封装： | 5 X 5 MM, ROHS COMPLIANT, LEADLESS, PLASTIC, SMT, QFN-32 |
| 文件页数： | 7/8页 |
| 文件大小： | 583K |
| 代理商： | HMC907LP5E |
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
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HMC907LP5E
v00.0510
GaAs pHEMT MMIC
POWER AMPLIFIER, 0.2 - 22 GHz
Application Circuit
pin number
function
Description
interface schematic
1, 4, 6, 8, 9,
16, 17, 20, 22,
24, 25, 32
GnD
package bottom has exposed metal paddle
that must be connected to rf/DC ground.
2, 3, 7, 10 - 15,
18, 19, 23,
26 - 31
n/C
The pins are not connected internally; however, all data
shown herein was measured with these pins connected to
rf/DC ground externally.
5
rfin
This pin is DC coupled and matched
to 50 ohms. Blocking capacitor is required.
21
rfoUT & Vdd
rf output for amplifier. Connect DC bias (Vdd) network to
provide drain current (idd). see application circuit herein.
Pin Descriptions
NOTE 1: Drain Bias (Vdd) must be applied through a broadband bias tee or external bias network.
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