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参数资料
| 型号： | HMC930 |
| 厂商： | HITTITE MICROWAVE CORP |
| 元件分类： | 放大器 |
| 英文描述： | 0 MHz - 40000 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER |
| 封装： | 2.82 X 1.50 MM, 0.10 MM HEIGHT, DIE-8 |
| 文件页数： | 9/10页 |
| 文件大小： | 703K |
| 代理商： | HMC930 |
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For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
HMC930
v00.0610
GaAs pHEMT MMIC
0.25 WATT POWER AMPLIFIER, DC - 40 GHz
pad number
function
Description
interface schematic
1
rfin
This pad is DC coupled and matched
to 50 ohms. Blocking capacitor is required.
2
VGG2
Gate control 2 for amplifier. Attach bypass
capacitor per application circuit herein. for nominal
operation +3.5V should be applied to Vgg2.
4, 7
ACG2, ACG4
low frequency termination. Attach bypass
capacitor per application circuit herein.
3
ACG1
low frequency termination. Attach bypass
capacitor per application circuit herein.
5
rfoUT & VDD
rf output for amplifier. Connect DC bias (Vdd) network to
provide drain current (idd). see application circuit herein.
6
ACG3
low frequency termination. Attach bypass
capacitor per application circuit herein.
8
VGG1
Gate control 1 for amplifier. Attach bypass
capacitor per application circuit herein. please
follow “mmiC Amplifier Biasing procedure”
application note.
Die Bottom
GnD
Die bottom must be connected to rf/DC ground.
Pad Descriptions
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