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参数资料
| 型号： | HMC995LP5GE |
| 厂商： | HITTITE MICROWAVE CORP |
| 元件分类： | 放大器 |
| 英文描述： | 12000 MHz - 16000 MHz RF/MICROWAVE WIDE BAND HIGH POWER AMPLIFIER |
| 封装： | 5 X 5 MM, ROHS COMPLIANT, LEADLESS, PLASTIC, SMT, QFN-24 |
| 文件页数： | 1/10页 |
| 文件大小： | 858K |
| 代理商： | HMC995LP5GE |
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
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HMC995LP5GE
v00.0611
GaAs pHEMT MMIC 3 WATT POWER AMPLIFIER SMT
WITH POWER DETECTOR, 12 - 16 GHz
General Description
Features
Functional Diagram
The HmC995lp5Ge is a 4 stage GaAs pHemT mmiC
2 watt power Amplifier with an integrated temperature
compensated on-chip power detector which operates
between 12 and 16 GHz. The HmC995lp5Ge provides
27 dB of gain, 35.5 dBm of saturated output power,
and 24% pAe from a +7V supply. The HmC995lp5Ge
exhibits excellent linearity and is optimized for high
capacity digital microwave radio. it is also ideal for
13.75 to 14.5 GHz Ku Band VsAT transmitters as
well as sATCom applications. The HmC995lp5Ge
amplifier i/os are internally matched to 50 ohms
and is packaged in a leadless Qfn 5x5 mm surface
mount package and requires no external matching
components.
intergrated power Detector
saturated output power: 35.5 dBm @ 24% pAe
High output ip3: 41 dBm
High Gain: 27 dB
DC supply: +5V to +7V @ 1200 mA
no external matching required
Electrical Specifications
T
A = +25° C, Vdd = Vdd1 = Vdd2 = Vdd3 = Vdd4 = Vdd5 = +7V, Idd = 1200 mA
[1]
Typical Applications
The HmC995lp5Ge is ideal for:
Point-to-Point Radios
Point-to-Multi-Point Radios
VSAT & SATCOM
Military & Space
parameter
min.
Typ.
max.
Units
frequency range
12 - 16
GHz
Gain [3]
24
27
dB
Gain Variation over Temperature
0.03
dB/ °C
input return loss
9
dB
output return loss
15
dB
output power for 1 dB Compression (p1dB)
32
34.5
dBm
saturated output power (psat)
35.5
dBm
output Third order intercept (ip3)[2]
41
dBm
Total supply Current (idd)
1200
mA
[1] Adjust (Vgg1=Vgg2=Vgg3) between -2 to 0V to achieve idd = 1200mA typical.
[2] measurement taken at +7V @ 1200mA, pout / Tone = +22 dBm
[3] Board loss subtracted out
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相关代理商/技术参数 |
参数描述 |
|---|---|
| HMC995LP5GE_12 | 制造商:HITTITE 制造商全称:Hittite Microwave Corporation 功能描述:GaAs pHEMT MMIC 3 WATT POWER AMPLIFIER SMT |
| HMC996LP4E | 制造商:Hittite Microwave Corp 功能描述:IC MMIC AMP VGA PHEMT 24-QFN |
| HMC996LP4E_12 | 制造商:HITTITE 制造商全称:Hittite Microwave Corporation 功能描述:VARIABLE GAIN AMPLIFIER |
| HMC997LC4 | 制造商:Hittite Microwave Corp 功能描述:IC MMIC AMP VGA/DVR AMP 24-QFN |
| HMC997LC4_12 | 制造商:HITTITE 制造商全称:Hittite Microwave Corporation 功能描述:VARIABLE GAIN AMPLIFIER |
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