- 您现在的位置：买卖IC网 > PDF目录381908 > HMH2369 (HSMC CORP.) NPN EPITAXIAL PLANAR TRANSISTOR PDF资料下载
参数资料
| 型号： | HMH2369 |
| 厂商： | HSMC CORP. |
| 英文描述： | NPN EPITAXIAL PLANAR TRANSISTOR |
| 中文描述： | 瑞展晶体管 |
| 文件页数： | 1/4页 |
| 文件大小： | 43K |
| 代理商： | HMH2369 |
HI-SINCERITY
MICROELECTRONICS CORP.
HPH2369
NPN EPITAXIAL PLANAR TRANSISTOR
Spec. No. : HE6133
Issued Date : 1993.06.18
Revised Date : 2002.02.18
Page No. : 1/4
HPH2369
HSMC Product Specification
Description
The HPH2369 is designed for general purpose switching and
amplifier applications.
Features
Low Collector Saturation Voltage
High speed switching Transistor
Absolute Maximum Ratings
Maximum Temperatures
Storage Temperature............................................................................................ -55 ~ +150
°
C
Junction Temperature.................................................................................... +150
°
C Maximum
Maximum Power Dissipation
Total Power Dissipation (Ta=25
°
C)................................................................................ 625 mW
Maximum Voltages and Currents (Ta=25
°
C)
VCBO Collector to Base Voltage......................................................................................... 40 V
VCES Collector to Emitter Voltage ...................................................................................... 40 V
VCEO Collector to Emitter Voltage...................................................................................... 15 V
VEBO Emitter to Base Voltage........................................................................................... 4.5 V
IC Collector Current ....................................................................................................... 500 mA
Characteristics
(Ta=25
°
C)
Symbol
BVCBO
BVCEO
BVCES
BVEBO
ICBO
ICES
IEBO
*VCE(sat)1
*VCE(sat)2
*VCE(sat)3
*VBE(sat)1
*VBE(sat)2
*hFE1
*hFE2
fT
Cob
Min.
40
15
40
4.5
-
-
-
-
-
-
700
-
40
20
500
-
Typ.
-
-
-
-
-
-
-
-
-
-
-
-
80
-
-
-
Max.
-
-
-
-
400
300
100
250
300
600
850
1.5
120
-
-
4
Unit
V
V
V
V
nA
nA
nA
mV
mV
mV
mV
V
Test Conditions
IC=100uA, IE=0
IC=10mA, IB=0
IC=10uA, VBE=0
IE=10uA, IC=0
VCB=20V, IE=0
VCE=25V, VBE=0
VEB=2V, IC=0
IC=10mA, IB=1mA
IC=10mA, IB=0.3mA
IC=100mA, IB=10mA
IC=10mA, IB=1mA
IC=100mA, IB=1mA
IC=10mA, VCE=1V
IC=100mA, VCE=2V
IC=10mA, VCE=10V, f=100MHZ
VCB=5V, f=1MHz, IE=0
*Pulse Test: Pulse Width
≤
380us, Duty Cycle
≤
2%
MHz
pF
TO-92
相关PDF资料 |
PDF描述 |
|---|---|
| HMJE13001 | HMJE13001 |
| HMJE13007A | NPN EPITAXIAL PLANAR TRANSISTOR |
| HMJE13007 | NPN EPITAXIAL PLANAR TRANSISTOR |
| HMJE13009A | 12 AMPERE NPN SILICON POWER TRANSISTOR |
| HMJE2955T | PNP EPITAXIAL PLANAR TRANSISTOR |
相关代理商/技术参数 |
参数描述 |
|---|---|
| HM-H244DE2-8BS1-TG30 | 功能描述:硬公制连接器 BLACK CONNECTOR HEADER 8-ROW HM RoHS:否 制造商:TE Connectivity / AMP 系列:Z-Pack 产品类型:Receptacles 排数:5 位置/触点数量:110 安装角:Right 端接类型:Pin 外壳材料:Polyester 触点材料:Phosphor Bronze 触点电镀:Gold 类型: |
| HM-H250E2-8BS1-KR | 功能描述:硬公制连接器 HARD METRIC STANDARD RoHS:否 制造商:TE Connectivity / AMP 系列:Z-Pack 产品类型:Receptacles 排数:5 位置/触点数量:110 安装角:Right 端接类型:Pin 外壳材料:Polyester 触点材料:Phosphor Bronze 触点电镀:Gold 类型: |
| HM-H250E2-8BS1-TG30 | 功能描述:硬公制连接器 BLACK CONNCTR HEADER 8-RW HM RoHS:否 制造商:TE Connectivity / AMP 系列:Z-Pack 产品类型:Receptacles 排数:5 位置/触点数量:110 安装角:Right 端接类型:Pin 外壳材料:Polyester 触点材料:Phosphor Bronze 触点电镀:Gold 类型: |
| HM-H250E2-8BS1-TG30L | 功能描述:硬公制连接器 200SIG 8R STRT HDR 2MM PRESS-FIT RoHS:否 制造商:TE Connectivity / AMP 系列:Z-Pack 产品类型:Receptacles 排数:5 位置/触点数量:110 安装角:Right 端接类型:Pin 外壳材料:Polyester 触点材料:Phosphor Bronze 触点电镀:Gold 类型: |
| HM-H250E2-8BS1-TR40B | 功能描述:硬公制连接器 2MM 200 SIG CON 8 ROW STR HDR RoHS:否 制造商:TE Connectivity / AMP 系列:Z-Pack 产品类型:Receptacles 排数:5 位置/触点数量:110 安装角:Right 端接类型:Pin 外壳材料:Polyester 触点材料:Phosphor Bronze 触点电镀:Gold 类型: |
发布紧急采购，3分钟左右您将得到回复。