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参数资料
| 型号： | HMMC-5620 |
| 元件分类： | 放大器 |
| 英文描述： | 6000 MHz - 20000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER |
| 封装： | 0.0555 X 0.0397 INCH, DIE |
| 文件页数： | 1/8页 |
| 文件大小： | 178K |
| 代理商： | HMMC-5620 |
1
Agilent HMMC-5620
6–20 GHz High–Gain Amplifier
Data Sheet
Description
The HMMC-5620 is a wideband
GaAs MMIC amplifier designed
for medium output power and
high gain over the 6 to 20 GHz
frequency range. Four MESFET
cascade stages provide high gain,
while the single bias supply of-
fers ease of use. E–Beam lithog-
raphy is used to produce gate
lengths of
≈0.3 m. The HMMC-
5620 incorporates advanced
MBE technology, Ti–Pt–Au gate
metallization, silicon nitride pas-
sivation, and polyimide for
scratch protection.
Chip Size:
1410 × 1010 m (55.5 × 39.7 mils)
Chip Size Tolerance:
± 10 m (± 0.4 mils)
Chip Thickness:
127 ± 15 m (5.0 ± 0.6 mils)
Pad Dimensions:
80 × 80 m (2.95 × 2.95 mils), or larger
Absolute Maximum Ratings[1]
1. Operation in excess of any one of these conditions may result in permanent damage to this
device. TA = 25°C except for Tch, Tstg, and Tmax.
Symbol
Parameters/Conditions
Min.
Max.
Units
VDD
Positive Drain Voltage
7.5
volts
IDD
Total Drain Current
135
mA
PDC
DC Power Dissipation
1.0
watts
Pin
CW Input Power
20
dBm
Tch
Operating Channel Temp.
+160
°C
Tcase
Operating Case Temperature
55
°C
Tstg
Storage Temperature
65
+165
°C
Tmax
Maximum Assembly Temp.
(for 60 seconds maximum)
300
°C
Notes:
Features
Wide-Frequency Range:
6–20 GHz
High Gain: 17 dB
Gain Flatness: ± 1.0 dB
Return Loss:
Input 15 dB
Output 15 dB
Single Bias Supply
Operation
Low DC Power Dissipation:
PDC ~ 0.5 Watts
Medium Power:
20 GHz: P-1dB: 12 dBm, Psat: 13 dBm
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