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参数资料
| 型号： | HMN12816D-85I |
| 厂商： | Electronic Theatre Controls, Inc. |
| 英文描述： | Non-Volatile SRAM MODULE 2Mbit (128K x 16-Bit), 40pin-Dip, 5V |
| 中文描述： | 非易失性SRAM模块即可移植（128K的x 16位），40pin浸，5V的 |
| 文件页数： | 3/9页 |
| 文件大小： | 143K |
| 代理商： | HMN12816D-85I |
HANBit
HMN12816D
URL : www.hbe.co.kr 3 HANBit Electronics Co.,Ltd
Rev. 0.0 (April, 2002)
READ/WRITE FUNCTION
/OE
/WE
/CEL
/CEU
VCC CURRENT
DQ0-DQ7
DQ8-DQ15
CYCLE
PERFORMED
H
H
X
X
I
CCO
High-Z
High-Z
Output Disabled
L
H
L
L
Output
Output
L
H
L
H
Output
High-Z
L
H
H
L
I
CCO
High-Z
Output
Read Cycle
X
L
L
L
Input
Input
X
L
L
H
Input
High-Z
X
L
H
L
I
CCO
High-Z
Input
Write Cycle
X
X
H
H
I
CCS
High-Z
High-Z
Output Disabled
DATA RETENTION MODE
The HMN12816D provides full functional capability for V
CC
greater than 4.5 volts and write protects by 4.25volts. Data is
maintained in the absence of V
CC
without any additional support circuitry. The nonvolatile static RAMs constantly monitor
V
CC
. Should the supply volt-age decay, the NV SRAM
’
s automatically write protect themselves, all inputs become "don't
care," and all out-puts become high impedance. As V
CC
falls below approximately 3.0 volts, a power switching circuit
connects the lithium energy source to RAM to retain data. During power-up, when V
CC
rises above approximately 3.0 volts,
the power switching circuit connects external V
CC
to RAM and disconnects the lithium energy source.
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
RATING
CONDITIONS
DC voltage applied on V
CC
relative to V
SS
V
CC
-0.3V to 7.0V
DC Voltage applied on any pin excluding V
CC
relative to V
SS
V
T
-0.3V to 7.0V
V
T
≤
V
CC
+0.3
Operating temperature
T
OPR
0 to 70
°
C
Storage temperature
T
STG
-40
°
C to 70
°
C
Temperature under bias
T
BIAS
-10
°
C to 70
°
C
Soldering temperature
T
SOLDER
260
°
C
For 10 second
NOTE:
Permanent device damage may occur if Absolute Maximum Ratings are exceeded.
Functional operation
should be restricted to the Recommended DC Operating Conditions detailed in this data sheet.
Exposure to higher than recommended voltage for extended periods of time could affect device reliability.
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| HMN1288D-120 | Non-Volatile SRAM MODULE 1Mbit (128K x 8-Bit), 32Pin-DIP, 5V |
| HMN1288D-120I | Non-Volatile SRAM MODULE 1Mbit (128K x 8-Bit), 32Pin-DIP, 5V |
| HMN1288D-150 | Non-Volatile SRAM MODULE 1Mbit (128K x 8-Bit), 32Pin-DIP, 5V |
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相关代理商/技术参数 |
参数描述 |
|---|---|
| HMN1288D | 制造商:HANBIT 制造商全称:Hanbit Electronics Co.,Ltd 功能描述:Non-Volatile SRAM MODULE 1Mbit (128K x 8-Bit), 32Pin-DIP, 5V |
| HMN1288D-120 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:Non-Volatile SRAM MODULE 1Mbit (128K x 8-Bit), 32Pin-DIP, 5V |
| HMN1288D-120I | 制造商:HANBIT 制造商全称:Hanbit Electronics Co.,Ltd 功能描述:Non-Volatile SRAM MODULE 1Mbit (128K x 8-Bit), 32Pin-DIP, 5V |
| HMN1288D-150 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:Non-Volatile SRAM MODULE 1Mbit (128K x 8-Bit), 32Pin-DIP, 5V |
| HMN1288D-150I | 制造商:HANBIT 制造商全称:Hanbit Electronics Co.,Ltd 功能描述:Non-Volatile SRAM MODULE 1Mbit (128K x 8-Bit), 32Pin-DIP, 5V |
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