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参数资料
| 型号： | HMN1288J-55I |
| 厂商： | Electronic Theatre Controls, Inc. |
| 英文描述： | Non-Volatile SRAM MODULE 1Mbit (128K x 8-Bit),34Pin-JLCC, 5V |
| 中文描述： | 非易失性SRAM模块为1Mbit（128K的× 8位），34Pin - JLCC，5V的 |
| 文件页数： | 2/8页 |
| 文件大小： | 158K |
| 代理商： | HMN1288J-55I |
HANBit
HMN1288J
URL: www.hbe.co.kr 2 HANBit Electronics Co.,Ltd.
Rev.0.0 (FEBRUARY/ 2002)
FUNCTIONAL DESCRIPTION
The HMN1288J executes a read cycle whenever /WE is inactive(high) and /CE is active(low). The address specified by
the address inputs(A
0
-A
16
) defines which of the 131,072 bytes of data is accessed. Valid data will be available to the eight
data output drivers within t
ACC
(access time) after the last address input signal is stable.
When power is valid, the HMN1288J operates as a standard CMOS SRAM. During power-down and power-up cycles, the
HMN1288J acts as a nonvolatile memory, automatically protecting and preserving the memory contents.
The HMN1288J is in the write mode whenever the /WE and /CE signals are in the active (low) state after address inputs
are stable. The later occurring falling edge of /CE or /WE will determine the start of the write cycle. The write cycle is
terminated by the earlier rising edge of /CE or /WE. All address inputs must be kept valid throughout the write cycle. /WE
must return to the high state for a minimum recovery time (t
WR
) before another cycle can be initiated. The /OE control
signal should be kept inactive (high) during write cycles to avoid bus contention. However, if the output bus been enabled
(/CE and /OE active) then /WE will disable the outputs in t
ODW
from its falling edge.
The HMN1288J provides full functional capability for Vcc greater than 4.75 V and write protects by 4.5 V nominal. Power-
down/power-up control circuitry constantly monitors the Vcc supply for a power-fail-detect threshold V
PFD
. When V
CC
falls
below the V
PFD
threshold, the SRAM automatically write-protects the data. All inputs to the RAM become
“
don
’
t care
”
and
all outputs are high impedance. As Vcc falls below approximately 2.7 V, the power switching circuit connects the lithium
energy soure to RAM to retain data. During power-up, when Vcc rises above approximately 2.7 volts, the power switching
circuit connects external Vcc to the RAM and disconnects the lithium energy source. Normal RAM operation can resume
after Vcc exceeds 4.75 volts.
BLOCK DIAGRAM PIN DESCRIPTION
A
0
-A
16
: Address Input
/CE : Chip Enable
V
SS
: Ground
DQ
0
-DQ
7
: Data In / Data Out
/WE : Write Enable
/OE : Output Enable
V
CC
: Power (+5V)
NC : No Connection
/CE
/RESET
Vout
/OE
/WE
A(0:16)
DQ(0:7)
Vcc
Vcc
/CE2
/CE1
/CE_con
相关PDF资料 |
PDF描述 |
|---|---|
| HMN1288J-70 | Non-Volatile SRAM MODULE 1Mbit (128K x 8-Bit),34Pin-JLCC, 5V |
| HMN1288J-70I | Non-Volatile SRAM MODULE 1Mbit (128K x 8-Bit),34Pin-JLCC, 5V |
| HMN1M8DV | Non-Volatile SRAM MODULE 8Mbit (1024k x 8bit) 36Pin-DIP, 3.3V |
| HMN1M8DV-120I | Non-Volatile SRAM MODULE 8Mbit (1024k x 8bit) 36Pin-DIP, 3.3V |
| HMN1M8DV-150I | Non-Volatile SRAM MODULE 8Mbit (1024k x 8bit) 36Pin-DIP, 3.3V |
相关代理商/技术参数 |
参数描述 |
|---|---|
| HMN1288J-70 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:Non-Volatile SRAM MODULE 1Mbit (128K x 8-Bit),34Pin-JLCC, 5V |
| HMN1288J-70I | 制造商:未知厂家 制造商全称:未知厂家 功能描述:Non-Volatile SRAM MODULE 1Mbit (128K x 8-Bit),34Pin-JLCC, 5V |
| HMN1M8D | 制造商:HANBIT 制造商全称:Hanbit Electronics Co.,Ltd 功能描述:Non-Volatile SRAM MODULE 8Mbit (1,024K X 8-Bit), 36Pin-DIP, 5V |
| HMN1M8D-120 | 制造商:HANBIT 制造商全称:Hanbit Electronics Co.,Ltd 功能描述:Non-Volatile SRAM MODULE 8Mbit (1,024K X 8-Bit), 36Pin-DIP, 5V |
| HMN1M8D-120I | 制造商:HANBIT 制造商全称:Hanbit Electronics Co.,Ltd 功能描述:Non-Volatile SRAM MODULE 8Mbit (1,024K X 8-Bit), 36Pin-DIP, 5V |
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