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参数资料
| 型号： | HMN1M8DV-70I |
| 厂商： | Electronic Theatre Controls, Inc. |
| 英文描述： | Non-Volatile SRAM MODULE 8Mbit (1024k x 8bit) 36Pin-DIP, 3.3V |
| 中文描述： | 非易失性SRAM模块8Mbit（1024k × 8位）36Pin浸，3.3 |
| 文件页数： | 1/9页 |
| 文件大小： | 196K |
| 代理商： | HMN1M8DV-70I |
HANBit
HMN1M8DV
URL:www.hbe.co.kr
1
HANBit Electronics Co.,Ltd
Rev.0.0
(FEBRUARY/ 2002)
GENERAL DESCRIPTION
The HMN1M8DV Nonvolatile SRAM is a 8,388,608-bit static RAM organized as 1,048,576 bytes by 8 bits.
The HMN1M8DV has a self-contained lithium energy source provide reliable non-volatility coupled with the unlimited write
cycles of standard SRAM and integral control circuitry which constantly monitors the single 3.3V supply for an out-of-
tolerance condition. When such a condition occurs, the lithium energy source is automatically switched on to sustain the
memory until after V
CC
returns valid and write protection is unconditionally enabled to prevent garbled data. In addition the
SRAM is unconditionally write-protected to prevent an inadvertent write operation. At this time the integral energy source is
switched on to sustain the memory until after V
CC
returns valid.
The HMN1M8DV uses extremely low standby current CMOS SRAM
’
s, coupled with small lithium coin cells to provide non-
volatility without long write-cycle times and the write-cycle limitations associated with EEPROM.
FEATURES
w
Access time : 70, 85, 120, 150 ns
w
High-density design : 8Mbit Design
w
Battery internally isolated until power is applied
w
Industry-standard 36-pin 1,024K x 8 pinout
w
Unlimited write cycles
w
Data retention in the absence of V
CC
w
10-years minimum data retention in absence of power
w
Automatic write-protection during power-up/power-down
cycles
w
Data is automatically protected during power loss
OPTIONS MARKING
w
Timing
70 ns - 70
85 ns - 85
120 ns -100
150 ns -150
Non-Volatile SRAM MODULE 8Mbit (1024k x 8bit) 36Pin
–
DIP, 3.3V
Part No.
HMN1M8DV
1 36
2 35
3 34
4 33
5 32
12 25
13 24
14 23
15 22
16 21
17 20
18 19
10 27
11 26
6 31
7 30
8 29
9 28
A
2
A
1
NC
NC
A
0
A
7
A
6
A
5
A
4
A
3
A
12
A
14
A
16
DQ
0
DQ
1
DQ
2
V
SS
V
CC
A
19
NC
A
11
/OE
A
8
A
9
A
10
/CE
A
13
A
15
A
17
/WE
DQ
3
DQ
4
DQ
5
DQ
6
DQ
7
A
18
PIN ASSIGNMENT
36-pin Encapsulated Package
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|---|---|
| HMN1M8DV-85I | Non-Volatile SRAM MODULE 8Mbit (1024k x 8bit) 36Pin-DIP, 3.3V |
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相关代理商/技术参数 |
参数描述 |
|---|---|
| HMN1M8DV-85I | 制造商:未知厂家 制造商全称:未知厂家 功能描述:Non-Volatile SRAM MODULE 8Mbit (1024k x 8bit) 36Pin-DIP, 3.3V |
| HMN1M8DVN | 制造商:HANBIT 制造商全称:Hanbit Electronics Co.,Ltd 功能描述:Non-Volatile SRAM MODULE 8Mbit (1024k x 8bit) 40Pin ? DIP, 3.3V |
| HMN1M8DVN-120 | 制造商:HANBIT 制造商全称:Hanbit Electronics Co.,Ltd 功能描述:Non-Volatile SRAM MODULE 8Mbit (1024k x 8bit) 40Pin ? DIP, 3.3V |
| HMN1M8DVN-120I | 制造商:HANBIT 制造商全称:Hanbit Electronics Co.,Ltd 功能描述:Non-Volatile SRAM MODULE 8Mbit (1024k x 8bit) 40Pin ? DIP, 3.3V |
| HMN1M8DVN-150 | 制造商:HANBIT 制造商全称:Hanbit Electronics Co.,Ltd 功能描述:Non-Volatile SRAM MODULE 8Mbit (1024k x 8bit) 40Pin ? DIP, 3.3V |
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