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参数资料
| 型号： | HN4C05JU-A |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 400 mA, 12 V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 封装： | 2-2L1A, USV, 5 PIN |
| 文件页数： | 1/4页 |
| 文件大小： | 253K |
| 代理商： | HN4C05JU-A |
HN4C05JU
2004-07-01
1
TOSHIBA Transistor
Silicon NPN Epitaxial Type (PCT Process)
HN4C05JU
Low Frequency Amplifier Applications
Muting Applications
Switching Applications
Low Saturation Voltage : VCE(sat)(1)=15mV (Typ.)
:@ IC = 10mA/ IB = 0.5mA)
High Collector Current :IC=400mA(Max.)
Maximum Ratings (Ta = 25°C) (Q1, Q2 Common)
Characteristic
Symbol
Rating
Unit
Collector-base voltage
VCBO
15
V
Collector-emitter voltage
VCEO
12
V
Emitter-base voltage
VEBO
5
V
Collector current
IC
400
mA
Base current
IB
50
mA
Collector power dissipation
PC*
200
mW
Junction temperature
Tj
125
°C
Storage temperature range
Tstg
55~125
°C
*Total rating. Power dissipation per element should not exceed 130mW.
Electrical Characteristics (Ta = 25°C) (Q1, Q2 Common)
Characteristic
Symbol
Test Condition
Min
Typ.
Max
Unit
Collector cut-off current
ICBO
VCB =15V, IE = 0
0.1
A
Emitter cut-off current
IEBO
VEB = 5V, IC = 0
0.1
A
DC current gain
hFE (Note)
VCE = 2V, IC = 10mA
300
1000
VCE (sat)(1)
IC = 10mA, IB = 0.5mA
15
30
Collector-emitter saturation voltage
VCE (sat)(2)
IC = 200mA, IB = 10mA
110
250
mV
Collector-emitter saturation voltage
VBE(sat)
VCE = 200mA, IC = 10mA
0.87
1.2
V
Transition frequency
fT
VCE = 2V, IC = 10mA
80
130
MHz
Collector output capacitance
Cob
VCB = 10V, IE = 0, f = 1MHz
4.2
pF
"ON" resistance
Ron
,IB = 1mA,Vin=1Vrms,f=1kHz
0.9
Turn on time
ton
85
Storage time
tstg
170
Switching time
Fall down time
tf
40
ns
(Note) hFE Classifications A:300~600, B:500~1000
1.BASE1
2.EMITTER
3.BASE2
4.COLLECTOR2
5.COLLECTOR1
(B1)
(E)
(B2)
(C2)
(C1)
JEDEC
JEITA
TOSHIBA
2-2L1A
Weight: 0.0062g (Typ.)
Unit: mm
I.P
.
O.P.
D uty c ycle
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相关代理商/技术参数 |
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|---|---|
| HN4C05JUB | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | BJT | ARRAY | COMM EMITTER | 12V V(BR)CEO | 400MA I(C) | SOT-353 |
| HN4C06J | 制造商:Toshiba America Electronic Components 功能描述: |
| HN4C06J-GR(TE85L,F | 制造商:Toshiba America Electronic Components 功能描述:Transistor NPN Dual 120V 0.1A hfe200 SMV |
| HN4C51J | 制造商:TOSHIBA 制造商全称:Toshiba Semiconductor 功能描述:Audio Frequency General Purpose Amplifier Applications |
| HN4C51J(TE85L,F) | 制造商:Toshiba America Electronic Components 功能描述:TRANSISTOR NPN SMV PLN |
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