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参数资料
| 型号： | HSF-1-100-5R90-K-LF |
| 厂商： | TT Electronics/IRC |
| 文件页数： | 3/4页 |
| 文件大小： | 0K |
| 描述： | RES HIGH SURGE 5.90 OHM 1W 2512 |
| 标准包装： | 1 |
| 系列： | HSF |
| 电阻（欧姆）： | 5.9 |
| 功率（瓦特）： | 1W |
| 复合体： | 厚膜 |
| 温度系数： | ±100ppm/°C |
| 容差： | ±10% |
| 封装/外壳： | 2512（6432 公制） |
| 尺寸/尺寸： | 0.079" 直径 x 0.251" L（2.01mm x 6.38mm） |
| 端子数： | 2 |
| 包装： | 标准包装 |
| 其它名称： | 989-1186-6 |
High
HSF Surge Film
High Mount Metal
Surface Surge Film Glaze?
HSF Series
Surface Mount Metal Glaze TM
IRC Solder Re ? ow Recommendations
Sn-Pb Eutectic and Pb-Free Reflow Profiles
t P
T P
T L
25
T smax
T smin
t s
Preheat
t 25°C to Peak
Ramp-up
t L
Critical Zone
T L to T P
Ramp-down
Time
* Based on Industry Standards and IPC recommendations
Pro ? le Feature
Average Ramp-up rate (Tsmax to Tp)
Preheat
- Temperature Min (Tsmin)
- Temperature Max (Tsmax)
- Time (Tsmin to Tsmax) (ts)
Time maintained above
- Temperature (TL)
- Time (tL)
Peak Temperature (TP)
Time within 5°C of actual Peak Temperature (tp)2
Ramp-down Rate
Time 25°C to Peak Temperature
Sn-Pb Eutectic
Assembly
3°C / second max.
100°C
150°C
60 -120 seconds
183°C
60 - 150 seconds
See Table 1
10 - 30 seconds
6°C / second max.
6 minutes max.
Pb-Free
Assembly
3°C / second max.
150°C
200°C
60 -180 seconds
217°C
60 - 150 seconds
See Table 2
20 - 40 seconds
6°C / second max.
8 minutes max.
Note 1 : All temperatures refer
to topside of the package,
measured on the package
body surface.
Note 2 : Time within 5 °C of
actual peak temperature (tp)
speci ? ed for the re ? ow pro ? les
is a “supplier” minimum and a
“user” maximum.
Volume mm3 < 350
Volume mm3 ≥ 350
Tabel1: SnPbEutecticProcess-
Package Peak Re ? ow Temperatures
Package
Thickness
< 2.5 mm 240 +0/-5°C 225 +0/-5°C
≥ 2.5 mm 225 +0/-5°C 225 +0/-5°C
Tabel 2: Pb-free Process -
Package Peak Re ? ow Temperatures
Package Volume mm3 Volume mm3 Volume mm3
Thickness < 350 350 - 2000 > 2000
< 1.6 mm 260°C * 260°C * 260°C *
1.6 mm - 2.5 mm 260°C * 250°C * 245°C *
≥ 2.5 mm 250°C * 245°C * 245°C *
* Tolerance: The device manufacturer/supplier shall assure process compat-
ibility up to and including the stated classi ? cation temperature at the rated MSL
level.
Wire and Film Technologies Division ? 4222 South Staples Street ? Corpus Christi Texas 78411 USA
Telephone: 361 992 7900 ? Facsimile: 361 992 3377 ? Website: www.irctt.com
General Note
TT electronics reserves the right to make changes in product specification without notice or liability.
All information is subject to TT electronics’ own data and is considered accurate at time of going to print.
Note 1 : Package volume excludes external
terminals (balls, bumps, lands, leads) and/or
non-integral heat sinks.
Note 2 : The maximum component temperature
reached during re ? ow depends on package
thickness and volume. The use of convection
re ? ow processess reduces the thermal gradients
between packages. However, thermal gradients
due to differences in thermal mass of SMD pack-
ages may still exist.
Note 3 : Components intended for use in “lead-
free” assembly process shall be evaluated using
the “lead-free” peak temperature and pro ? les
de ? ned in Table 1, 2 and re ? ow pro ? le whether
or not lead-free.
HSF-1 Series Issue October 2010 Sheet 3 of 4
www.bitechnologies.com www.irctt.com www.welwyn-tt.com
? TT electronics plc
01.14
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