3
Absolute Maximum Ratings at T
A
= 25C
Parameter
DC Forward Current
[1]
Peak Pulsing Current
[2]
Power Dissipation
Reverse Voltage (I
R
= 10
μ
A)
Reverse Voltage (I
R
= 100
μ
A)
LED Junction Temperature
Operating Temperature Range
Storage Temperature Range
Soldering Temperature
AlInGaP
30
100
78
–
5
95
–40 to +85
–40 to +100
See IR soldering profile (Figure 8)
InGaN
25
100
105
5
–
95
–40 to +85
–40 to +100
Units
mA
mA
mW
V
V
C
C
C
Notes:
1. Derate linearly as shown in Figure 4.
2. Pulse condition of 1/10 duty and 0.1 ms width.
Electrical Characteristics at T
A
= 25C
Forward Voltage
V
F
(Volts)
@ I
F
= 20 mA
Part Number
Typ.
HSMA-C540
2.0
HSMC-C540
2.0
HSMM-C540
3.8
HSMN-C540
3.8
HSMU-C540
2.2
HSMZ-C540
2.2
Reverse Breakdown
V
R
(Volts)
@ I
R
= 100
μ
A
Min.
5
5
–
–
5
5
Reverse Breakdown
V
R
(Volts)
@ I
R
= 10
μ
A
Min.
–
–
5
5
–
–
Capacitance C
(pF), V
F
= 0,
f = 1 MHz
Typ.
17
17
50
50
30
30
Thermal
Resistance
R
θ
J–PIN
(C/W)
Typ.
485
485
380
380
485
485
Max.
2.6
2.6
4.2
4.2
2.6
2.6
Optical Characteristics at T
A
= 25C
Luminous
Intensity
I
V
(mcd)
@ 20 mA
[1]
Min.
Color,
Dominant
Wavelength
λ
d[2]
(nm)
Typ.
590
626
525
470
590
629
Viewing
Angle
2
θ
1/2
Degrees
[3]
Typ.
100
°
/40
°
100
°
/40
°
100
°
/40
°
100
°
/40
°
100
°
/40
°
100
°
/40
°
Luminous
Efficacy
η
V
(lm/w)
Typ.
470
175
475
70
550
145
Peak
Wavelength
λ
peak
(nm)
Typ.
592
635
523
468
592
641
Part Number
HSMA-C540
HSMC-C540
HSMM-C540
HSMN-C540
HSMU-C540
HSMZ-C540
Color
As AlInGaP Amber 96
As AlInGaP Red
InGaN Green
InGaN Blue
TS AlInGaP Amber 157
TS AlInGaP Red
Typ.
160
210
230
55
270
350
96
57
26
209
Notes:
1. The luminous intensity, I
V
, is measured at the peak of the spatial radiation pattern, which may not be aligned with the mechanical axis of the
lamp package.
2. The dominant wavelength,
λ
d
, is derived from the CIE Chromatically Diagram and represents the perceived color of the device.
3.
θ
1/2
is the off-axis angle where the luminous intensity is 1/2 the peak intensity.