参数资料
型号: HSMS-2702-TR2
英文描述: High Performance Schottky Diode for Transient Suppression
中文描述: 高性能肖特基二极管瞬态抑制
文件页数: 7/8页
文件大小: 116K
代理商: HSMS-2702-TR2
7
I
F
V
F
FORWARD VOLTAGE (V)
.01
10
1
.1
300
100
0
0.1
0.3
0.2
0.5
0.4
0.6
HSMS-270x
HBAT-540x
Figure 7. Forward Current vs.
Forward Voltage at 25
°
C.
Because the automatic, pick-and-
place equipment used to assemble
these products selects dice from
adjacent sites on the wafer, the
two diodes which go into the
HSMS-2702 or HSMS-270C (series
pair) are closely matched
without the added expense of
testing and binning.
Current Handling in Clipping/
Clamping Circuits
The purpose of a clipping/clamp-
ing diode is to handle high cur-
rents, protecting delicate circuits
downstream of the diode. Current
handling capacity is determined
by two sets of characteristics,
those of the chip or device itself
and those of the package into
which it is mounted.
current
limiting
pull-down
(or pull-up)
long cross-site cable
noisy data-spikes
Vs
0V
voltage limited to
Vs + Vd
0V
Vd
Figure 8. Two Schottky Diodes
Are Used for Clipping/Clamping in
a Circuit.
Consider the circuit shown in
Figure 8, in which two Schottky
diodes are used to protect a
circuit from noise spikes on a
stream of digital data. The ability
of the diodes to limit the voltage
spikes is related to their ability to
sink the associated current spikes.
The importance of current
handling capacity is shown in
Figure 9, where the forward
voltage generated by a forward
current is compared in two
diodes.
0
0.1
0.2
0.3
0.5
0.4
V
F
I
F
FORWARD CURRENT (mA)
0
3
2
1
6
4
5
R
s
= 7.7
R
s
= 1.0
Figure 9. Comparison of Two
Diodes.
The first is a conventional
Schottky diode of the type gener-
ally used in RF circuits, with an R
S
of 7.7
. The second is a Schottky
diode of identical characteristics,
save the R
S
of 1.0
. For the
conventional diode, the relatively
high value of R
S
causes the
voltage across the diode
s termi-
nals to rise as current increases.
The power dissipated in the diode
heats the junction, causing R
S
to
climb, giving rise to a runaway
thermal condition. In the second
diode with low R
S
, such heating
does not take place and the
voltage across the diode terminals
is maintained at a low limit even
at high values of current.
Maximum reliability is obtained in
a Schottky diode when the steady
state junction temperature is
maintained at or below 150
°
C,
although brief excursions to
higher junction temperatures can
be tolerated with no significant
impact upon mean-time-to-failure,
MTTF. In order to compute the
junction temperature, Equations
(1) and (3) below must be simulta-
neously solved.
I
F
= I
S
e
1
11600 (V
F
I
F
R
S
)
(1)
I
S
= I
0
e
T
J
2
n
1
TJ
1
298
4060
(2)
T
J
= V
F
I
F
θ
JC
+ T
A
(3)
where:
I
F
= forward current
I
S
= saturation current
V
F
= forward voltage
R
S
= series resistance
T
J
= junction temperature
I
O
= saturation current at 25
°
C
n = diode ideality factor
θ
JC
= thermal resistance from
junction to case (diode lead)
=
θ
package
+
θ
chip
T
A
= ambient (diode lead)
temperature
Equation (1) describes the for-
ward V-I curve of a Schottky
diode. Equation (2) provides the
value for the diode
s saturation
current, which value is plugged
into (1). Equation (3) gives the
value of junction temperature as a
function of power dissipated in
the diode and ambient (lead)
temperature.
相关PDF资料
PDF描述
HSMS-270B-BLK High Performance Schottky Diode for Transient Suppression
HSMS-270B-TR1 High Performance Schottky Diode for Transient Suppression
HSMS-270B-TR2 High Performance Schottky Diode for Transient Suppression
HSMS-270C-BLK High Performance Schottky Diode for Transient Suppression
HSMS-270C-TR1 High Performance Schottky Diode for Transient Suppression
相关代理商/技术参数
参数描述
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HSMS-270B-BLK 制造商:AGILENT 制造商全称:AGILENT 功能描述:High Performance Schottky Diode for Transient Suppression
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